在半導體產業中，通常利用智切法(Smart-Cut)製作絕緣體上矽材料(Silicon on Insulator；SOI)，製作流程如下：晶圓清洗、氫離子佈值、晶圓鍵合、退火以及化學機械研磨。上述步驟中，晶圓鍵合的階段是需要將晶圓為持在高溫的環境，使鍵合強度達到標準才可薄膜轉移；傳統高溫爐加熱費時且高溫時產生熱應力的問題，使良率降低，希望能透過微波解決。 本研究目的在透過常壓氮氣電漿活化矽晶圓表面，以增加鍵合強度，再施以微波處理，使矽晶圓受熱均勻來達到短時間高強度之鍵合，最後除了拍攝TEM外，又以TEM試片製作過程其中的步驟來檢測鍵合的強度。 ;In the semiconductor industry , it is often use Smart-Cut to manufacture SOI , and the process as follow : wafer cleaning , the hydrogen implantation , wafer bonding , annealing and chemical mechanical polishing. The above steps , the wafer bonding is needed to hold the wafer in a high temperature environment in which the bonding strength of the thin film up to standard before the transfer. Traditional heating problems of thermal stress and long time. We hope using microwave can solve problems. This study using atmospheric nitrogen plasma systems to activate silicon surface and microwave Si/Si bonding pairs. Finally , in addition to TEM , the TEM specimen production process wherein the step of detecting the bonding strength.
