中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/69200
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 80990/80990 (100%)
造访人次 : 42729082      在线人数 : 1238
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/69200


    题名: 高穿透類鑽碳膜之研究;Research of Transparent Diamond Like Carbon films
    作者: 張洪銘;Chang,Hung-Ming
    贡献者: 光電科學與工程學系
    关键词: 類鑽膜;DLC;HMDSO
    日期: 2015-09-30
    上传时间: 2015-11-04 17:21:47 (UTC+8)
    出版者: 國立中央大學
    摘要: 類鑽膜為鑽石結構sp3鍵結與石墨結構sp2鍵結的非晶(Amorphous)碳膜,具有絕佳的機械性質可做為保護膜。但因內應力過大與穿透率不佳,使其在應用上受到侷限。而類鑽膜的摻雜改善了上述缺點,使類鑽膜更利於被使用。
    常見的類鑽膜製程為電漿輔助化學氣相沉積法(PECVD),而本實驗與一般的PECVD架構不同,稱此系統為射頻磁控電漿輔助化學氣相沉積法,可獨立控制電漿功率與負偏壓大小。在此實驗中,利用Raman和FTIR量測分析與驗證類鑽薄膜特性,再利用XPS輔助佐證實驗結果。甲烷與六甲基二矽氧烷作為反應氣體,利用射頻磁控電漿輔助化學氣相沉積法摻雜SiOx於類鑽膜,透過改變六甲基二矽氧烷的流量控制矽氧化合物在膜中的含量,特別是透過SiOx的摻雜。實驗以負偏壓大小為200 V,電漿功率為140 W,HMDSO流量為0.2 sccm下,所鍍製出的類鑽薄膜具有88 %的穿透率,硬度值達12.9 Gpa,其厚度約100 nm。;Diamond like carbon (DLC) films which was consisted of sp3 diamond bonding and sp2 graphite is an amorphous carbon films. It has excellent mechanical property and was used as protective coating. DLC films have high intrinsic compressive stress and low transparency, so it limits its application. Doping of DLC films improved its disadvantage, so it can be used widely.
    The common process is plasma enhanced chemical vapor deposition (PECVD), but there are some differences in our setup. This setup was called radio frequency magnetron plasma enhanced chemical vapor deposition. It can control plasma power and DC bias independently. We use Raman and FTIR spectrometer to analyze and prove properties of diamond like carbon films in the experiment. XPS measurement assists in evidencing experiment result. DLC films with an addition of SiOx were deposited in radio frequency magnetron plasma enhanced chemical vapor deposition from a mixture of methane and hexamethyldisiloxane (HMDSO). The flow rate of HMDSO was changed in order to vary the SiOx content in the films, particularly doping SiOx in DLC films. 200 V negative self bias, 100 W RF power and 0.2 sccm HMDSO were applied to deposit DLC films with transparency up to 88 % and hardness up to 12.9 Gpa. The thickness of films is about 100 nm.
    显示于类别:[光電科學研究所] 博碩士論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML1090检视/开启


    在NCUIR中所有的数据项都受到原著作权保护.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明