懸空石墨烯之特性研究與應用;Characterizations of Suspended Graphene Film and its Applications

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題名:	懸空石墨烯之特性研究與應用;Characterizations of Suspended Graphene Film and its Applications
作者:	陳祐民;Chen,Yu-Min
貢獻者:	機械工程學系
關鍵詞:	石墨烯;懸空石墨烯;化學氣相沉積;轉印;電容式壓力感測器;Graphene;Suspended Graphene;Chemical Vapor Deposition;Transfer;Capacitive Pressure Sensor
日期:	2015-10-02
上傳時間:	2015-11-04 17:51:48 (UTC+8)
出版者:	國立中央大學
摘要:	石墨烯為單一原子層的二維材料，具有優異的材料性質包含：高光穿透率、可彎折、高熱傳導、電傳導等性質，近年來石墨烯的相關研究發展相當快速，但大多數元件都需基板支撐，當石墨烯薄膜被基板支撐時，基板會參與石墨烯的聲子、電子等粒子的傳遞，導致無法呈現本質石墨烯性質，因此石墨烯懸空便成為實現常溫下超高速元件的一個選擇；但目前單層石墨烯以背向漂浮法能懸空的尺度為直徑500μm，製程複雜不穩定且容易於附著高分子殘留物。本研究主要發展一種簡易且可靠的方法來研製大面積的懸空石墨烯。首先，將銅箔基板藉由電化學拋光後，以常壓化學氣相沉積法進行成長，改變氫氣流量得到高品質單層石墨烯薄膜，其製程優化之單晶高品質石墨烯的晶粒可達~50μm。第二部分將單層石墨烯堆疊五層並以熱裂解法進行轉印，得到最大尺度可達1,500μm石的懸空墨烯薄膜，成功懸空的比率皆較背向漂浮法提高200%，且能排除高分子殘餘物的影響，氧化基團鍵結分別下降4～6%不等，載子遷移率提高154%。此外，本研究也演示了電容式壓力感測器的應用，結果顯示電容值與壓力變化具有良好的線性趨勢，而其感測之靈敏度為15.15aF/Pa，相對於矽基材料提升達七倍(~770%)，基於此種懸空結構的製程，在未來將可望應用於微機電和生醫感測器、高頻電子元件等廣泛的應用。;Graphene is a one atom thickness 2D material that shows remarkable material properties, including high optical transparency, mechanical flexibility, high thermal conductivity, and superior high conductivity. In the last decade, graphene research and its related applications have been attracted intensive attentions. However, the earlier research on graphene device were performed on substrate. The substrate induced carrier scattering, charge impurity doping and corrugation that drastically degrade the intrinsic properties of graphene. Thus the suspended graphene shows superior intrinsic material properties on carrier transport, thermal conductivity and mechanical elasticity. Especially the practical application in ultra-high speed device. Before this study, the suspended graphene membrane made by the inverted floating method can yield the large size about 500μm in diameter; however, the suspended graphene by this approach were suffered from issues of the difficulty for manipulation and complicated process as well as the large amounts of polymer residue on graphene. This study was to develop a simple and reliable route to achieve a large area of suspended graphene. The proposed process including (1) the optimization of graphene growth conditions by atmospheric pressure chemical vapor deposition (APCVD) and (2) the transferring process for suspended graphene by solvent replacing and thermal decomposition method. It was found out that the optimized graphene single crystalline size with high quality could be up to ~50μm. The results shows that the largest suspended graphene membrane over 1,500μm in diameter can be obtained by stacking and transferring 5-layered graphene on a holy substrate. The XPS characterization shows that the extremely low oxygen functional groups of 4～6% on graphene membrane after thermal annealing can be achieved, suggesting the ultra-clean and high quality of suspended graphene can be made from our approach. To study the intrinsic properties and application of our suspended graphene membrane, the devices integrated with suspended graphene were fabricated. The results shows that the carrier mobility on suspended graphene is enhanced up to 154% when compared with the substrate supported graphene. In addition, the capacitive pressure sensor made by our ultra-large suspended graphene membrane, showing a superior high sensitivity and excellent signal linearity than conventional capacitive pressure sensors. The sensitivity of 15.15 aF / Pa were measured which is increased about 422~ 770% than silicon-based material. The developed method for ultra-large suspended graphene pave the way for the potential applications on electromechanical actuator, ultra-sensitive chemical/bio sensors as well as the high-frequency electronic devices.
顯示於類別:	[機械工程研究所] 博碩士論文

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