脈衝式離子源助鍍氟化鑭薄膜之研究;The research of pulse ion beam-assisted deposition of lanthanum fluoride

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題名:	脈衝式離子源助鍍氟化鑭薄膜之研究;The research of pulse ion beam-assisted deposition of lanthanum fluoride
作者:	張逸謙;Yi-chien Chang
貢獻者:	光電科學研究所
關鍵詞:	脈衝式;離子助鍍;氟化鑭;IAD;pulse;ion-assisted;LaF3
日期:	2009-03-18
上傳時間:	2009-09-22 10:35:10 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	本研究以熱阻舟蒸鍍氟化鑭（LaF3）薄膜，輔以持續式或脈衝式離子助鍍，主要探討此兩種離子源助鍍對於熱蒸鍍氟化鑭在紫外波段（190nm~350n m）特性的影響，例如穿透率、折射率、光學耗損較持續式離子助鍍低14%，脈衝離子助鍍能夠降低表面rms大約1/3消光係數等光學特性。利用脈衝式離子源助鍍能夠使波長190nm時薄膜折射率由1.68上升至1.70、且因氟化鑭薄膜的非均勻性得以改善而使光學厚度為1/2波長的穿透率回到基板。另外觀察薄膜的微觀結構與結晶特性等，分析對薄膜特性的影響。利用量測薄膜的光學特性、微觀結構、結晶特性等等，分析氟化鑭薄膜在紫外光區產生光學耗損的原因，以了解持續性或脈衝式的離子助鍍在改善氟化鑭薄膜膜質，且降低光學耗損上的差異。Thermal boat evaporation was employed to prepare LaF3 single-layer coatings for UV applications. Optical properties and microstructure, including transmittance, index refraction, extinction coefficient, and surface properties, were measured by spectrophotometer, ellipsometric, SEM, and AFM. With pulse mode IAD, we can make lanthanum fluoride thin film to have higher packing density and decrease annoying absorption at wavelength rage190 to 350nm caused by constant IAD. With optimized parameters, refraction index of lanthanum fluoride thin film was raised from 1.68 to 1.7 at 190nm, extinchomogeneity of tion coefficient was reduced 14%, and surface roughness was reduced 1/3. Since thin film’s quality was improved to reduce the inhomogeneous phenomenon, the transmittances of halfwave optical thickness go back to the transmittance of substrate.
顯示於類別:	[光電科學研究所] 博碩士論文

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