有機電激發光元件鋁金屬陰電極厚度之影響

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/7120

Title:	有機電激發光元件鋁金屬陰電極厚度之影響
Authors:	羅世奎;Shih-Kuei Lo
Contributors:	光電科學研究所碩士在職專班
Keywords:	有機電激發光元件;被動式有機電激發光面板;leakage current;cross talk;ELectroluminescence display;OLED
Date:	2003-01-08
Issue Date:	2009-09-22 10:49:57 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文提出一種新的方法來製備有機電激發光元件；此方法為在元件蒸鍍完適當厚度的鋁金屬陰電極後，以RF 電漿轟擊鋁金屬陰電極，使金屬電極形成一原金屬以及其自身氧化物層之複合結構，實驗結果顯示，以本方法可降低元件因殘留於基板表面粉塵(dust)所造成之漏電流，進而消除cross talk的問題。此元件結構的優點為在現有的製程環境下，無需添購其他的設備，即可提高元件之整流比(rectification ratio)；除此之外，適當的金屬氧化層還可作為保護層，以避免元件因外界環境的侵蝕而損壞。 The research paper is to raise a new process to modify organic light emitting display (OLED) and to produce a no cross talk display .The advantage of this process is more simple, no need to purchase any new equipment. This device with a multi-electrode contains a pure Al layer and its own oxidation layer. This process can modify device with O2 plasma and produce an oxidation layer on present Al metal. It can reduce device causing leakage current due to dust residue under surface of substrate and increase the rectification ratio. This oxidation layer can be a protection layer and avoid any damage caused by outside circumstance.
Appears in Collections:	[Executive Master of Optics and Photonics] Electronic Thesis & Dissertation

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