添加溶劑對於鈣鈦礦薄膜太陽能電池表現之影響;Influence of the solvent additives on the photovoltaic peroformance of organometal lead perovskite based solar cells

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/71555

Title:	添加溶劑對於鈣鈦礦薄膜太陽能電池表現之影響;Influence of the solvent additives on the photovoltaic peroformance of organometal lead perovskite based solar cells
Authors:	陳威年;Chen,Wei-Nien
Contributors:	光電科學與工程學系
Keywords:	鈣鈦礦太陽能電池;perovskite
Date:	2016-07-27
Issue Date:	2016-10-13 13:16:24 (UTC+8)
Publisher:	國立中央大學
Abstract:	隨著綠能意識抬頭，太陽能的應用成為重要的課題之一，因此太陽能電池的光電轉換效率成為眾所矚目的焦點。近年來，以鈣鈦礦(Perovskite)薄膜太陽能電池的功率轉換效率(power conversion efficiency, PCE)之突破最為迅速，深具發展潛力。本論文研究的太陽能電池之元件架構為: Ag/PC61BM/CH3NH3PbI3/PEDOT:PSS/ITO/glass。Ag與ITO (氧化銦錫)分別為陰極與陽極; [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM )與Poly(3-hexylthiophene-2,5-diyl) (PEDOT:PSS)分別是電子傳輸層(electron transport layer, ETL)與電洞傳輸層(hole transport layer, HTL); CH3NH3PbI3則是鈣鈦礦結構吸光層。以ITO/glass作為基板，旋塗上PEDOT:PSS、CH3NH3PbI3、PC61BM各層薄膜，最後熱蒸鍍Ag作為陰電極，完成元件製作。經優化製程參數後，得到的最佳元件表現為：最高功率轉換效率達到13.35% ; 短路電流(short-circuit current density, JSC )達22.9 1mA/cm2 ; 開路電壓(open-circuit voltage, VOC )達 0.95 V；填充因子(fill factor, FF)達61.55 %。 ;The research and the development of solar cells have achieved more attention with the consciousness of greenergy economy is gradually risen in the global.Recently, the power convertion efficiency of Perovskite solar cell is improved rapidly, containing potential of development. In this thesis, the structure of the Perovskite solar cells is silver/PC61BM/CH3NH3PbI3/PEDOT:PSS/ITO/glass. Silver and ITO are the cathode and anode. PCBM and PEDOT:PSS are the electron transport and hole transport layers. CH3NH3PbI3 is the Perovskite absorber. PEDOT:PSS, CH3NH3PbI3 and PC61BM layers were coated on the ITO glass substrate by using spin coater sequentially. Finally, a silver layer was coated on the top of PCBM thin film by thermal evaporation deposition to form the device. After the optimized process, the best power convertion efficiency of the device could achieve 13.35%. The short-circuit current density, the open-circuit voltage, and the fill factor achived 22.91 mA/cm2, 0.95 V, and 61.55%.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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