本研究使用磁控濺鍍法在鍺矽基板上生長高品質多晶砷化鎵薄膜，藉著磁控濺鍍沉積大面積製程，且在磊晶過程中不會使用有毒氣體等優勢，但較難磊晶成長，所以著重於薄膜生長之研究，若能成功於鍺矽基板生長高品質砷化鎵薄膜，就能取代機械強度較弱與成本較高的鍺晶圓。我們藉由基板溫度、濺鍍功率以及氫氣流量製程參數的調變，成功於鍺矽基板生長高品質多晶砷化鎵薄膜，由於氫能與砷化鎵薄膜鍵結形成(H-Ga, H-As)而減少缺陷結構，最後藉由熱退火製程使晶格重新排列，讓薄膜結構更為完整，且降低了表面粗糙度。本實驗使用Raman(拉曼光譜)、XRD(X射線繞射)、EBSD(電子背向散射繞射)、TEM(穿透式電子顯微鏡)、AFM(原子力顯微鏡)進行量測分析與討論。;In this study, high-quality polycrystalline gallium arsenide thin films have been grown on the germanium silicon substrates by using a magnetic sputtering method. The advantages of the sputtering method were it is a low-cost and secure process method to replace the expensive and fragile germanium wafer by the germanium silicon one. The high-quality polycrystalline gallium arsenide films can be grown on the germanium silicon substrates by odjusting the substrate temperature, sputtering power, and hydrogen flow during the process. After the process, Raman spectrometer, XRD, EBSD, TEM and AFM were used to analyze the properties of crystallization.
