探討在不同微結構銅中鈀原子之擴散行為並藉此發展低溫銅鈀固態擴散鍵合應用於氮化鎵發光二極體封裝製程;Low Temperature Cu/Pd Diffusion Bonding Development and Applying Cu-Pd Bonding on Thin-Gan Led Packaging Process

NCUIR > Engineering College > Department of Chemical and Materials Engineering > Research Project > Item 987654321/78161

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/78161

Title:	探討在不同微結構銅中鈀原子之擴散行為並藉此發展低溫銅鈀固態擴散鍵合應用於氮化鎵發光二極體封裝製程;Low Temperature Cu/Pd Diffusion Bonding Development and Applying Cu-Pd Bonding on Thin-Gan Led Packaging Process
Authors:	劉正毓
Contributors:	國立中央大學化學工程與材料工程學系
Date:	2018-12-19
Issue Date:	2018-12-20 10:58:45 (UTC+8)
Publisher:	科技部
Abstract:	本計晝目的為利用Cu/Pd間原子快速交互擴散的特性發展Cu/Pd固態擴散金屬鍵合技術。由初步的研究成果我們發現，在Cu/Pd鍵合時改變適當的銅微結構有提升Cu/Pd間交互擴散係數的現象。所以，本計晝將研究銅微結構對Cu/Pd間擴散行為提升的效應，並研究出一適當應力施加範圍，可以將鍵結溫度能降低到150°C以下。我們認為可透過應力施予及調控銅的優選方向可進一步降低 Cu/Pd鍵合溫度。而低溫鍵合可有效減少晶圓鍵結所產生的熱應力破壞元件的效能。本計晝主要方向是將銅鈀的固態擴散接合溫度可以低於150°C以下，三年研究分為四大部份討論：（1)不同應力下之Cu/Pd交互擴散行為探討;(2)不同晶格優選方向（不同晶粒大小)之銅電鍍層對Cu/Pd交互擴散行為探討並建立完整低溫Cu/Pd鍵合系統；（3)將低溫Cu/Pd擴散鍵合系統應用在thin-GaN LED之製程技術開發；（4)研究不同低溫Cu/Pd鍵合製程條件對thin-GaN垂直式LED的光電表現的影響。 ;Three-dimensional integrated circuit (3D IC) has been considered as the key process for the next generation semiconductor technology. Also, wafer-to-wafer bonding technology also has advantages on thin-GaN vertical LED because of (1) uniform current spreading and (2) high emitting area. Therefore, wafer-to-wafer technology would be an important technology in the future. For 3D IC package and wafer to wafer bonding technology, solid/solid metal bonding has demonstrated to be a suitable process in low temperature. The solid diffusional bonding has many merits, such as, (1) no formation of intermetallic compounds (IMC) at the bonding interface, (2) Avoid the residual stress produced by CTE mismatch in high temperature process. In this proposal, we will develop Cu/Pd bonding. Importantly, an applied external stress can enhance the bonding interface and reduce the bonding temperature. Therefore, we propose three-year project focusing on developing a low-temperature Cu/Pd bonding process below 150°C. The entire three-years project breaks down to the following two main items: (1) Under an external stress, the inter-diffusion barrier energy of Cu/Pd inter-diffuse in different preferred orientation and the different grain size of the electroplating copper layer. (2) Fabricate vertical thin-GaN LED by lower bonding temperature Cu/Pd bonding process.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Chemical and Materials Engineering] Research Project

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