磊晶成長三族氮化物於六英吋矽基板與其材料特性分析;Growth and Characterization of III-nitride on 150 mm Si Substrates

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Title:	磊晶成長三族氮化物於六英吋矽基板與其材料特性分析;Growth and Characterization of III-nitride on 150 mm Si Substrates
Authors:	游荃岳;YU, CHUAN-YUE
Contributors:	電機工程學系
Keywords:	高電子遷移率電晶體;有機金屬化學氣象沉積;氮化鎵;HEMT;MOCVD;GaN
Date:	2018-11-02
Issue Date:	2019-04-02 15:06:37 (UTC+8)
Publisher:	國立中央大學
Abstract:	從過去的文獻中得知大家致力於改善氮化鋁銦(氮化鋁鎵)/氮化鋁/氮化鎵異質結構的傳輸特性，藉由減緩合金散射、介面粗糙度散射等散射機制以求提升其電子遷移率，但其上升程度依舊有所侷限，在此基礎上為了進一步提高電子遷移率，改善背景雜質散射為目前重要的課題。本論文研究主題為以有機金屬化學蒸氣沉積法成長氮化鋁銦(氮化鋁鎵)/氮化鋁/氮化鎵異質結構於矽基板上，並探討其緩衝層及各成長參數對於磊晶及元件特性之影響。研究目的一為降低在高阻值及675 μm矽基板成長所出現的高晶圓翹曲，本研究在成長氮化鎵緩衝層前成長了氮化鎵/氮化鋁以及氮化鎵/氮化鋁鎵兩種超晶格結構以減緩後續氮化鎵緩衝層所產生之高壓縮應力，以避免磊晶龜裂，並減少晶圓翹曲。研究目的二為提升磊晶電性，本研究利用不同成長前趨物以及成長參數如氣體五三比、溫度、載氣與壓力，降低通道中之背景碳濃度。經優化後，成長於1 mm矽基板之氮化鋁鎵/氮化鋁/氮化鎵異質結構，其室溫電子遷移率達2,190 cm2/V-s，二維電子氣濃度為7.2E12 cm-2，通道片電阻為397 ohm/⎕；10 K下之電子遷移率更可提升到28,000 cm2/V-s。此特性已是文獻中之最佳記錄之一。成長於675 um矽基板之磊晶片晶圓翹曲可低至2.8 um，電子遷移率亦可達2,090 cm2/V-s，二維電子氣濃度為7 x1012 cm-2，通道片電阻為429 ohm/⎕。 ;According to literature, everyone dedicate to improving the AlInN(AlGaN)/AlN/GaN heterostructures transport property by minizing the effect from alloy scattering and interface roughness scattering. But the improvement still has limits. So improving the impurity scattering is one of the topics to further improve mobility base on previous work. This study aims to investigate the effect of different buffer and epitaxy growth parameter to epitaxy layer and device characteristic in AlInN(AlGaN)/AlN/GaN heterostructures grow on silicon substrate by using MOCVD. The first purpose of this research is to solve high wafer bow when we grow on high resistivity and 675 μm silicon substrate. To avoid wafer cracking and high wafer bow, we use AlN/GaN and GaN/AlGaN superlattice structure to slow down the compressive strain in thick GaN buffer growth in this study. The second purpose is to reduce carbon background impurity in GaN channel layer to improve carrier transport property by using different Ga precursor and growth parameter modulation ; like V/ III ratio、temperature、carrier gas and pressure. After optimizing, room temperature mobility in AlGaN/AlN/GaN heterostructures grow on 1 mm silicon can reach 2,190 cm2/V-s with 2DEG concentration 7.2E12 cm-2 and sheet resistance 397 ohm/⎕；even reach 28,000 cm2/V-s mobility under 10 K measurement. It’s one of the best result in literatures. In the end , we achieve low wafer bow 2.8 μm with excellent uniformity and high mobility 2,090 cm2/V-s、2DEG concentration 7E12 cm-2、sheet resistance 429 ohm/⎕ on 675 μm silicon substrate.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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