氮化鎵電晶體 SPICE 模型建立 與反向導通特性分析

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題名:	氮化鎵電晶體 SPICE 模型建立與反向導通特性分析
作者:	余翊瑄;Yu, Yi-Hsuan
貢獻者:	電機工程學系
關鍵詞:	氮化鎵;反向導通特性;GaN;SPICE;Reverse Conduction
日期:	2019-08-21
上傳時間:	2019-09-03 16:01:28 (UTC+8)
出版者:	國立中央大學
摘要:	本論文針對氮化鎵電晶體來建立一個簡單而準確的 SPICE 模型來提供給電路設計者在設計電路上面能根據所需的應用與需求來進行設計。首先針對氮化鎵電晶體的基本靜態與動態特性進行量測，其中包含電流−電壓、電容−電壓曲線及動態的雙脈衝測試電路之電壓與電流波型，同時會進行不同溫度下的電流−電壓量測曲線。以往使用分段的方程式來描述電晶體在截止、線性及飽和區來建立模型，然而使用此不分段方程式在模擬時會導致出現不收斂以及模擬時間過長等問題，因此本論文透過不分段的行為模式方程式來描述氮化鎵電晶體的三個區域之特性，而為了使模型與量測數據能順利進行擬合，透過修正方程式及適當的參數調整的方法來使模型能與量測數據間能吻合，再利用雙脈衝測試電路進行元件在開關特性上的驗證，最終建立出完整的 SPICE 模型。另一方面，氮化鎵功率元件的反向導通特性對於電路應用方面來說也是一個很重要的議題，因為在元件關閉時需要提供一個電流的續流路徑來避免元件產生過高的壓降及導通損耗。本研究會針對傳統氮化鎵元件及改良後氮化鎵元件來進行反向導通區域特性的量測，進而比較兩者元件之間的差異與探討，同時建立具有改善反向導通特性的氮化鎵元件SPICE 模型，並透過雙脈衝測試電路進行模擬與比較。;This study builds a simple and accurate SPICE model for gallium nitride transistors to provide circuit designers so that they can design circuits according to the application and needs. First of all, the basic characteristics of the GaN HEMTs are measured, including the output characteristics, capacitance-voltage curve, dynamic double-pulse test circuit measurement, and the output characteristics at different temperatures. In the past, to establish SPICE model, the segmented equations was used to describe the transistors in the cut-off, linear and saturation regions. However, the behavioral model of GaN HEMTs with segmented equations suffers from the simulation convergence problem and leads the long simulation time in practice. the use of this non-segmented equation can lead to non-convergence and long simulation time. In order to improve the simulation convergence, this paper proposes a behavioral model which uses nonsegmented, smooth continuous equations to describe the static and dynamic characteristics of GaN HEMTs. In order According to modify the behavior equations and adjustment the parameters to make the simulation and the measurement data fit smoothly. Finally, the double-pulse test circuit is used to verify the switching characteristics of the GaN HEMTs, and a complete SPICE model is established. On the other hand, the reverse conduction characteristics of GaN HEMTs are also an important issue for circuit applications, because a freewheeling path of current is required to prevent excessive voltage drop across the devices and prevent the large conduction losses. This study will measure the characteristics of the reverse conduction region for the conventional GaN HEMT and the modified GaN HEMT, and then compare the differences between these two devices, also builds a reverse SPICE model for the modified GaN HEMT.
顯示於類別:	[電機工程研究所] 博碩士論文

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