射頻磁控濺鍍矽基鍺薄膜及光偵測器光電特性分析;Germanium Thin Film on Silicon and the Characterization of Photodetectors

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/81879

Title:	射頻磁控濺鍍矽基鍺薄膜及光偵測器光電特性分析;Germanium Thin Film on Silicon and the Characterization of Photodetectors
Authors:	劉佶隴;LIU, CHI-LUNG
Contributors:	光電科學與工程學系
Keywords:	鍺;薄膜;光偵測器;Germanium;Thin Film;Photodetectors
Date:	2019-10-17
Issue Date:	2020-01-07 14:27:43 (UTC+8)
Publisher:	國立中央大學
Abstract:	摘要本研究以射頻磁控濺鍍法在矽基板上成長鍺薄膜，並應用其製作光偵測器。鍺的能隙比矽還小，因此其吸收截止波長可達1550 nm以上，而且具有較高載子遷移率，而濺鍍法優勢在於無需使用有毒易爆炸之氣體以及低成本製程，利用濺鍍法成長鍺薄膜及探討薄膜品質，並應用於光偵測器，將收光範圍延伸至近紅外光區。藉由調變濺鍍功率、正偏壓、氫氣流量，已於600°C時成長500 nm單晶鍺薄膜。於700°C退火後，鍺薄膜(400) XRD搖擺曲線之半高寬從2672 arcsec 降至2180 arcsec，且減少了其壓縮應力。此外加入硼顆粒共濺鍍退火後，可以得到摻雜濃度4.32×1019 cm-3及載子遷移率63.6 cm2/V-s之硼摻雜鍺薄膜。 700°C快速熱退火一分鐘之鍺薄膜光偵測器暗電流密度在-1V時約1.5 mA/cm2，其直徑180μm元件之850 nm波段光響應，在-1 V時為0.1 A/W，在-3 V時為0.2 A/W，在-3 V的1310 nm和1550 nm波段時分別為0.18 mA/W和0.14 mA/W。 ;Abstract A germanium thin film was grown on a silicon substrate by RF magnetron sputtering to fabricate a near infrared photodetector .Because of the energy gap of germanium is smaller than silicon, its cut-off absorption wavelength can reach NIR up to 1550 nm, and it has high carrier mobility. The advantage of sputtering method is that it is not necessary to use toxic and explosive gas and also a low-cost process. In this research, the sputtering method was applied to grow the film, the thin film quality, and deposit it to fabricate the photodetector to extend the wavelength range to the near-infrared region. A 500-nm single crystal germanium film has been grown at 600 ° C by adjusting the sputtering power, bias voltage, and hydrogen flow rate. After annealed to 700 °C, the full-width- half-maximum of the XRD rocking curve of the germanium film (400) decreased from 2672 arcsec to 2180 arcsec. Its compressive stress was reduced. In addition, the boron-doped germanium thin film with doping concentration of 4.32×1019 cm-3 and carrier mobility of 63.6 cm2/V-s was obtained by using co-sputtering boron particles and annealing process. After 700 °C rapid thermal annealing, the dark current density of the NIR photodetector is about 1.5 mA/cm2 at -1V, and the optical response of the 850- nm band of the 180-μm diameter device is 0.1 A/W at -1 V. It is 0.2 A/W at -3V and 0.18 mA/W and 0.14 mA/W at -3 V for 1310 nm and 1550 nm, respectively.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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