以高能脈衝磁控濺鍍開發摻雜型結晶IGZO透明金屬氧化物薄膜;Development of Doping Type C-Igzo Transparent Metal Oxide Semiconductors Using High Power Impulse Magnetron Sputtering Method

NCU Institutional Repository > 理學院 > 光電科學與工程學系 > 研究計畫 > Item 987654321/82156

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/82156

题名:	以高能脈衝磁控濺鍍開發摻雜型結晶IGZO透明金屬氧化物薄膜;Development of Doping Type C-Igzo Transparent Metal Oxide Semiconductors Using High Power Impulse Magnetron Sputtering Method
作者:	陳昇暉
贡献者:	國立中央大學光電科學與工程學系
关键词:	金屬氧化物薄膜;摻雜型結晶IGZO;高能脈衝磁控濺鍍;Metal Oxide Semiconductor Film;Doped Crystalline IGZO;High Power Impulse Magnetron Sputtering
日期:	2020-01-13
上传时间:	2020-01-13 14:18:25 (UTC+8)
出版者:	科技部
摘要:	本計畫為” 以高能脈衝磁控濺鍍開發摻雜型結晶IGZO透明金屬氧化物薄膜”，本計畫的研究目標則是藉由本研究團隊自行開發之高能脈衝磁控濺鍍來發展IGZO材料，方向為探討其不同摻雜類型之結晶半導體薄膜，該研究構想是建立於過去在低溫軟性基板技術與CAAC濺鍍磊晶技術，整合而成，為下世代顯示技術中不可或缺之關鍵技術，為達成此研究目的，本計畫將分為三年執行，第一年將進行微結晶IGZO透明金屬氧化物薄膜材料製程開發，先由材料角度出發，藉由室溫軟性基板製程之建立，修改實驗室目前已有之高能脈衝磁控濺鍍系統，發展相關製程與量測分析，先在軟性基板開發霍爾遷移率>20 cm2V-1s-1的IGZO；第二年將在玻璃與塑膠基板上進行遷移率>40 cm2V-1s-1的CAAC-IGZO薄膜製作，利用第一年之結果進行材料開發與製程整合，加入氮/氫鈍化技術以提升材料特性；最後第三年將完成不同金屬元素摻雜的結晶IGZO透明金屬氧化物薄膜研究，目標遷移率>50 cm2V-1s-1。 ;This is a proposal entitled of “Development of Doping Type c-IGZO Transparent Metal Oxide Semiconductors Using High Power Impulse Magnetron Sputtering Method” regarding the development of IGZO materials by high power impulse magnetron sputtering developed by the research team. The direction is to explore the crystalline metal oxide semiconductor films with different doping types. The research concept is based on the integration of low temperature flexible substrate technology and the C-Axis Aligned Crystal technology, which is an indispensable key for the next generation display technology. To achieve the purpose of this research, the project will be divided into three years of implementation, the first year will be microcrystalline IGZO transparent metal oxide thin film material process development, from the material point of view, through the establishment of room temperature flexible substrate process to develop IGZO with a Hall mobility > 20 cm2V-1s-1 on a flexible substrate. The second year we will fabricate CAAC-IGZO film with nitrogen/hydrogen passivation technology to achieve mobility > 40 cm2V-1s-1 on plastic substrate using the results of the first year for material development and process integration. In the third year, the crystallized IGZO transparent metal oxide film doped with different metal elements will be completed, and the target mobility is > 50 cm2V-1s-1.
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
显示于类别:	[光電科學與工程學系] 研究計畫

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	253	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....