研究由蕭特基勢壘在電化學中的電荷積累效應以開發出無光源陽極化Ｎ型矽技術;Research on Charge-Accumulation Effect of Schottky Barrier on Electrochemistry to Develop the Technology of Anodizing N-Type Silicon in the Dark

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Title:	研究由蕭特基勢壘在電化學中的電荷積累效應以開發出無光源陽極化Ｎ型矽技術;Research on Charge-Accumulation Effect of Schottky Barrier on Electrochemistry to Develop the Technology of Anodizing N-Type Silicon in the Dark
Authors:	李天錫
Contributors:	國立中央大學機械工程學系
Keywords:	奈米矽晶;多孔矽;電化學蝕刻;晶圓鍵合;蕭特基接面;Silicon Nanocrystals;Porous Silicon;Electrochemical Etching;Wafer Bonding;Schottky Junction
Date:	2020-01-13
Issue Date:	2020-01-13 14:53:22 (UTC+8)
Publisher:	科技部
Abstract:	以氫氟酸為電解液實施矽晶基板陽極製程形成之多孔矽層，在蝕刻節點含有奈米晶粒的結構，可作為矽光子發光元件。在進行光致發光實驗時，不同孔徑的孔隙激發出不同波長的光。依照量子侷限原理，這是因奈米晶粒尺寸不同所致。N型矽基板的主要載體式電子，電子的移動速率 (mobility) 為電洞三倍，因此對作為矽光子材料的發光元件來說，是相當重要的材料。本研究根據蕭特基接面結構，設計一排放基板內電子機制，使基板內電洞密度大幅提高，促成氫氟酸蝕刻矽晶表面形成多孔矽層。取得研究成果後預期可達到以下目的：(1) 以回收性疏水性晶圓鍵合技術取代鍍膜製程，達到環保目的。(2) 以蕭特基二極體結構取代鹵素燈光照步驟，提高能源使用效率及製程成本。(3) 提出新學術理論：翻轉現有N型多孔矽形成觀念需要有產生電洞之輔助裝置，擴展電化學技術使用範疇。(4) 探索在暗室內進行N型多孔矽製作方法，大幅降低外界光能干擾蝕刻反應之可能性，發展製作優良奈米矽晶材料之產業技術。(5)矽奈米晶疏水性改質研究，以備製膠溶原料，大幅擴大產業應用性。 ;The electrochemical anode process of the crystal material with hydrofluoric acid as the electrolyte can form a porous tantalum layer, and the structure containing the nanocrystal grains is also found at the etching node. Therefore, in the photoluminescence experiment, the pores of different pore sizes are excited differently. Wavelength of light. According to the principle of quantum limitation, this is due to the difference in grain size of nanocrystals. The main carrier type electron of the N-type germanium substrate, and the mobility of electrons is three times higher than that of the hole, and therefore is a very important material for a light-emitting element which is a photonic material. Based on the Schottky junction structure, this study designs an electron mechanism in the discharge substrate to greatly increase the density of the holes in the substrate, which leads to the formation of a porous layer on the surface of the hydrofluoric acid etched twin. In the development of N-type porous tantalum material technology in the darkroom, it is expected that the following objectives can be achieved after obtaining research results: (1) Replacing the coating process with recycled hydrophobic wafer bonding technology to achieve environmental protection. (2) Replace the halogen lamp illumination step with the Schottky diode structure to improve energy efficiency and process cost. (3) Academic theory: Invert the concept of N-type porous tantalum formation, propose to apply the Schottky junction working principle to change the electrical properties of the substrate, and expand the use of electrochemical technology. (4) Exploring the method of making N-type porous tantalum in a dark room, greatly reducing the possibility that external light energy interferes with the etching reaction, and it is expected to develop into an industrial technology for producing excellent nanocrystalline materials, and (5) Research on hydrophobic modification of silicon nanocrystals to prepare raw materials for silicon photonics and greatly expand industrial applicability.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Departmant of Mechanical Engineering ] Research Project

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