本論文以微型暨積體化雙頻匹配電路為設計目標，提出較為簡單並能大幅縮小尺寸的電路設計方式。本研究以雙頻橋式T線圈取代傳輸驗，而能將單頻電路轉換成雙頻電路，並同時達成電路尺寸的微型化，進而據以實現微型化之雙頻單殘枝匹配電路。除此之外，也利用雙頻單殘枝匹配電路完成雙頻低雜訊放大器的設計。上述雙頻單殘枝匹配電路以積體被動元件（IPD）製程實現，為驗證其電路效能，以四種不同負載設計雙頻單殘枝匹配電路，其操作頻率皆為2.4 GHz與5.5 GHz。在2.4 GHz的頻率下之電氣尺寸小於0.012λ0×0.014λ0；而在5.5 GHz下的電氣尺寸小於0.03λ0×0.032λ0，電路面積皆遠小於既有文獻。而雙頻低雜訊放大器則以積體被動元件(IPD)整合互補金屬氧化物半導體CMOS 180nm製程實現，在兩個操作頻率2.4 GHz與5.5 GHz下皆有達到低雜訊、高增益，與良好的阻抗匹配，也驗證了雙頻單殘枝匹配電路的實用。;This study aims at the design of miniature integrated dual-band impedance matching networks. A simple design method is propose and the circuit size can be largely reduced compared with the conventional designs. Specifically, the dual-band bridged-T coils are used to replace transmission lines in the conventional single stub matching network such that size reduction and dual-band operation can be simultaneously achieved.In addition, the proposed dual-band single stub matching circuit is applied to the design a dual-band low noise amplifier as an application example. The proposed dual-band single stub matching circuits are realized using an integrated passive device (IPD) process. The operating frequencies are 2.4 GHz and 5.5 GHz. The electrical size of them are less than 0.012λ0×0.014λ0 at 2.4 GHz, while it is less than 0.03λ0×0.032λ0 at 5.5 GHz. The proposed dual-band matching circuits are much smaller in size than the existing designs in the literature. On the other hand, the proposed dual-band low noise amplifier is realized using a IPD/-CMOS 180nm process. Low noise, high gain, and good impedance matching at the two center frequencies of 2.4 GHz and 5.5 GHz are achieved. This verifies the effectiveness of proposed dual band single stub matching circuit for dual-band microwave circuit design.
