現今的顯示器主要是由薄膜電晶體(thin film transistor，TFT)來驅動，而薄膜電晶體中的主動層(active layer)材料為顯示器特徵之關鍵，多數商用顯示器主要是使用非晶矽(a-Si)作為主動層，然而a-Si的載子遷移率不到1 cm2/Vs，低的載子遷移率造成低的顯示速度，a-Si已無法滿足高速顯示器的需求，其他材料如氧化銦鎵鋅(IGZO)的載子遷移率超過10 cm2/Vs以上，除了高載子遷移率之外還有均勻性佳、成本低…等優點，適合取代傳統非晶矽。 本研究使用高功率脈衝磁控濺鍍IGZO，利用高功率脈衝高電漿密度、高離化率、薄膜均勻性以及緻密度佳…等優點，成功地成長出高載子遷移率的IGZO薄膜，更一步藉由ZnO緩衝層以及退火製程成長出c軸取向結晶型IGZO(CAAC-IGZO)，CAAC-IGZO相較於a-IGZO有更低的漏電流以及更高的薄膜均勻性。 ;Displays nowadays are mainly driven by thin film transistor(TFT). The active(channel) layer material in the TFT has become the key for the property of displays. Most of the commercial displays applied amorphous silicon(a-Si) as the active layer. However, the carrier mobility of a-Si is less than 1 cm2/Vs, which is too low for the high speed display. The carrier mobility of other materials such as amorphous indium gallium zinc oxide(a-IGZO) exceeds above 10 cm2/Vs. In addition to high carrier mobility, it has the advantages of good uniformity and low cost which are better than a-Si. In this study, the high power impulse magnetron sputtering(HiPIMS) has been applied to deposit indium gallium zinc oxide. Utilizing its advantages of the high power impulse, the high plasma density, the high ionization rate, the good uniformity and density for thin film, a high carrier mobility IGZO film has been fabricated successfully. Besides, by using ZnO buffer layer and post annealing, the c-axis aligned crystalline IGZO(CAAC-IGZO) has been also fabricated with lower leakage current and higher film uniformity compared with a-IGZO.
