;The transistors developed with gallium nitride as the substrate has been proven to have several orders of magnitude improvement over traditional silicon-based materials, regardless of electron mobility, high power, and high temperature resistance. The GaN quality growth by metal organic vapor chemical deposition technology can already meet the application of optoelectronic components such as light emitting diodes, laser diodes. But the photodiodes that works in the deep ultraviolet (DUV) wavelength range has higher electrical requirements and higher requirements for the concentration and uniformity of the dopants in the epitaxial thin film.
One difficulty to meet this requirement is that the p-type doping efficiency is still not enough. Due to the high activation energy of Mg, only about (1-5%) of Mg can be successfully activated into a hole carriers. The delta doping method is a way to improve the electrical properties of the thin film. Compared with uniform doping, delta doping grown p-type GaN has higher hole carrier concentration and better film electrical properties.
In this study, the steady-state Uniform doping model and the unsteady-state Delta (δ) doping model are established by numerical simulation. The Close- Coupled Showerhead reactor will be applied. The study include two-dimensional and three-dimensional reactor geometric comparison analysis、thin-film deposition species analysis、doping process analysis. In order to improve the control of the doping process.
