由於積體電路技術的蓬勃發展，現今電晶體已趨向超高密度之製造與元件尺寸微縮至奈米化方向發展，在結構上具高深寬比(aspect ratio)之特性，而線寬更朝向深次奈米(deep sub-nanometer)邁進。因此，於現今半導體元件製程中，高品質且薄之薄膜沉積技術已被視為一極重要之研究課題。從薄膜的厚度、鍵結結構及其緻密度與半導體表面之附著特性將對其電子元件的電性及效能乃至到可靠度都有其極大之影響。據研究報導較高的壓力往往會增加每個週期的增長。然而，幾乎沒有做過具體研究在工作壓力對機制，材料遷移和反應速率的影響。而且，對這些的影響尚未評估由於具有復雜拓撲元素（如微溝槽和電晶體）的基板上壓力變化而導致的現有性能。因此，本研究著重於數值研究1到10托壓力的影響使用計算流體動力學方法沿ALD過程獲得的工作壓力。二維基底上具有微溝槽的表面上Al2O3 ALD薄膜製造過程的數值模擬被研究。協助先驅物反應過程中，並利用熱流場之機制與CFD(Computational Fluid Dynamics)模擬等技術來探討薄膜之形成及品質改善，以預期能精確控制薄膜厚度與結構而應用於深溝槽及3D堆疊奈米片元件之製作及電性最佳化，以應用於半導體產業製程。 ;Along with the aim of further shrinkage of devices, the deposition of improved quality Nano-film with peculiar features such as uniform, conformal, thickness control and compactness has been a critical challenge to the microsemiconductor industry. Tremendous interest has been focused on atomic layer deposition (ALD) as a thin film deposition technique capacity to deposit the desired quality. However, further comprehension of the ALD process is mandatory in order to increase the probability of the industry in achieving the necessary improvement, which can have a substantial impact on devices’ required properties such as size, performance, durability. It has been reported that higher pressure tends to increase the growth per cycle. However, little has been done to investigate the specific effects of the operation pressure on the mechanistic, species transport and reaction rates. Moreover, the effects on these prior properties due to the change of pressure on a substrate with complex topology elements, such as microtrenches and field-effect transistor, has not been evaluated. Hence, this study focuses to numerically investigate the effect between one and 10 torr operating pressure along the ALD process using the computational fluid dynamic approach. A two-dimensional numerical simulation of the Al2O3 ALD thin film fabrication process over a surface with micro-trenches on a substrate is studied. Trimethyl-Aluminium and Ozone were utilized as the metal and oxidation source reactants. To assist the precursor reaction process, a 2.5 second exposure time is added within the ALD sequence. The findings illustrated the fluid flow velocity, surface coverage, mass fraction, deposition rate and growth of the thin-film process. The evaluations unveil a close comparison to experimental work.
