電子束曝光製程氮化矽微環型共振腔之研究分析;The study and analysis of silicon nitride microring resonator by electron beam lithography

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題名:	電子束曝光製程氮化矽微環型共振腔之研究分析;The study and analysis of silicon nitride microring resonator by electron beam lithography
作者:	陳友元;Chen, You-Yuan
貢獻者:	光電科學與工程學系
關鍵詞:	波導;氮化矽;waveguide;Silicon nitride
日期:	2021-09-01
上傳時間:	2021-12-07 11:57:19 (UTC+8)
出版者:	國立中央大學
摘要:	本論文的主要內容為氮化矽波導微環型共振腔(Microring resonator)的製作。氮化矽用於集成非線性光學應用，為了獲得在線性或非線性狀態下均具有良好性能的光學元件，氮化矽光子學現今已成為非線性光學領域的絕佳平台波長轉換、超連續譜產生、頻率梳應用等。本論文將討論以電子束曝光顯影架構下的共振腔製程，首先討論電漿增強式化學氣相沉積(Plasma-enhanced chemical vapor deposition, PECVD)與低壓化學氣相沉積(Low-pressure chemical vapor deposition, LPCVD)所沉積的氮化矽作為波導，比較這兩種沉積系統所得的氮化矽波導後，高品質因子特性較好；第二部分則比較不同厚度的氮化矽波導；埋入氧化層對波導的影響；最後討論波導高溫退火之影響。在製程上本論文是採用電子束(Electron beam lithography)光刻進行曝光，使用Ma2405負光阻作為圖案的轉移，相較於傳統的紫外線光刻技術有較好的高解析度，在製作氮化矽波導有更小線寬的達成，再利用乾蝕刻完成氮化矽波導圖形轉移。最後也會進行高溫退火技術，將N-H鍵消除，降低傳播固有損耗，研究結果可得到品質因子9104，建立國內氮化矽微共振腔平台基礎。此外，會介紹氮化鎵波導製程，相較於氮化矽波導有著較高的折射率、二倍頻的產生、帶寬隙等優點，對未來非線性光學元件的發展上有著不可或缺的重要性。;The thesis discusses the fabrication of silicon nitride waveguide microring resonator with electron-beam (e-beam) lithography. Recently, silicon nitride has been widely used for integrated photonics. In order to obtain optical functions both in linear or nonlinear applications, silicon nitride has now become an excellent photonics platform, especially in the field of nonlinear optics, such as wavelength conversion, supercontinuum generation, and frequency combs, due to its nonlinearity coefficient and large bandgap. This thesis will first discuss silicon nitride film formation for the waveguide core with both plasma-enhanced chemical vapor deposition and low-pressure chemical vapor deposition. The high quality factor obtained by these two deposition systems will be compared. Second, we will show the effect of silicon nitride thickness, buried oxide layer thickness, and the thermal annealing on the quality factor of micro-ring resonators. In the fabrication process, electron beam lithography is applied with negative photoresist Ma2405 for pattern transfer. Compared with the traditional ultraviolet lithography technology, it has better resolution down to 10 nm, while a few hundred nanometer linewidth and gap are needed for the fabrication of silicon nitride waveguides. The silicon nitride waveguide is then patterned by (anisotropic) dry etching. Finally, the high-temperature annealing will be demonstrated. By eliminating the N-H bond and reducing the inherent loss of waveguide propagation, we obtain the quality factor of 9104 with free spectral range (FSR) ~2.0 nm and demonstrate a domestic silicon nitride micro-resonant cavity platform. In addition, preliminary data of gallium nitride waveguides will also be shown, which have the advantages of higher refractive index, nonlinear coefficient, bandwidth gap, and negligible two-photon absorption. It opens up a new path for future applications in nonlinear photonics.
顯示於類別:	[光電科學研究所] 博碩士論文

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