| 摘要: | 本論文主要可分為有機薄膜電晶體 (OFET)、染料敏化太陽能電池 (DSSC) 和鈣鈦
礦太陽能電池 (PSC) 的材料開發。
有機薄膜電晶體 (OFET) 的部分分為 N-type 及 P-type 材料，本研究成功以 TII
為核心，開發出四種不同碳鏈之醌型結構材料，包含 TIIQ-10、TIIQ-b8、TIIQ-b16 和
TIIQ-b17，其中 TIIQ-b16 在 N-type OFET 中表現出高達 2.54 cm2
V
-1
s
-1 的電子遷移
率，電流開關比為 105
~106，具有單極電子傳輸特性和強環境穩定性。同時成功以 DTTR 為
核心，外接不同共軛基團，開發另一系列材料 DFPT-DTTR 及 DFPbT-DTTR，其中 DFPT DTTR 在 P-type OFET 中表現出高達 0.48 cm2
V
-1
s
-1 的電洞遷移率。
鈣鈦礦太陽能電池 (PSC) 的部分，本研究利用 BCDT 作為核心，接上不同苯基烷
氧鏈，再分別於末端接上拉電子基團 IN、INCl 與 INBr，共開發出六種材料 INBCDT-8、
INBCDT-b8、INClBCDT-8、INClBCDT-b8、INBrBCDT-8、INBrBCDT-b8，其中以 INBrBCDT-b8 應
用於 PSC 中可獲得高達 22.20% 的 PCE 值，FF 值為 79%，JSC 值為 24.44 mA cm-2，VOC
值為 1.15 V ，還可有效地鈍化表面缺陷並增強元件界面處的電荷傳輸能力。同時成功合
成出以 maleimide 為核心的材料 MLIBP’-4D，其 PCE 值高達 21.20%。
目前已成功合成出應用於 OFET、DSSC 和 PSC 的共軛醌型化合物、有機染敏材料
和電洞傳輸材料，這些新材料經由 UV-Vis 及 DPV 測量其光學及電化學性質、DSC 及 TGA
測量其熱穩定性，且利用 X 射線衍射、原子力顯微鏡 (AFM) 和掠入射 X 射線衍射
(GIXRD) 了解分子結構、分子堆疊、薄膜形態、結晶度和元件效能之間的關係，多項材料
應用之光電元件正在優化中。;A number of small molecular organic semiconductors have been designed and synthesized for
various organic electronics device applications such as organic field-effect transistors (OFETs),
dye-sensitized solar cells (DSSCs), and perovskite solar cells (PSCs). The optical, and
electrochemical properties of these newly synthesized materials were examined using differential
pulse voltammetry (DPV), and UV-Visible absorption spectroscopy. Thermal properties were
investigated by differential scanning calorimetry (DSC) and thermo-gravimetric analysis (TGA).
Thin-film microstructure and film morphology were examined by X-ray diffraction, atomic force
microscopy (AFM), and grazing incidence X-ray diffraction (GIXRD) to understand the
relationship between the molecular structure, film morphology/crystallinity, and device
performance. The molecular structures of organic semiconductors and their molecular packing
properties were determined by single-crystal X-ray diffraction. In this research, air-processed
TIIQ-b16 OFETs exhibit electron mobility up to 2.54 cm2 V
−1
s
−1 with a current ON/OFF ratio of
105–106
exhibiting unipolar electron transport characteristics and enhanced ambient stability.
DFPT-DTTR compound based OFETs exhibit efficient hole transport mobility up to 0.48 cm2 V
−1
s
−1
. Non-fullerene acceptor (INBrBCDT-b8) was used as an anti-solvent in PSCs yielding an
excellent PCE of up to 22.20% with FF of 79%, a JSC of 24.44 mA cm-2
, and a VOC of 1.15 V, also
effectively passivate surface defects and enhance charge transport at the device interface. Further,
maleimide-based HTM (MLIBP’-4D) with tetra-substituted triphenylamine donors exhibits high performance PCE reaching up to 21.20 % in PSCs. Several conjugated quinoidal compounds,
organic dyes, and hole-transporting materials (HTMs) have been synthesized for OFETs, DSSCs,
and PSCs, respectively. Presently, device characterization and optimization of these newly
developed small molecules are in progress for future publications. |
