本研究利用微波加速單晶碳化矽表面氧化，提升單晶碳化矽的拋光效率。使用雙氧水及水1:1之比例做為微波氧化溶液，將碳化矽泡入並置於微波爐中微波加熱，利用雙氧水溶液和碳化矽的介電材料性質，快速升溫並氧化表面，使表面形成柔軟的氧化物，進而提升拋光速率，優化表面品質。 研究使用XPS、TEM和Mapping分析微波後碳化矽表面之生成物質，發現微波氧化碳化矽之表面氧元素峰值強度與氧含量百分比皆高於室溫氧化與無氧化碳化矽，同時觀測出表面生成Si、C和O之外的物質。使用精密天平量測不同氧化處理之碳化矽拋光材料移除質量，計算出拋光移除率，在微波10分鐘拋光5分鐘時獲得最高的材料移除率為1.31 µm/hr，說明氧化物的生成有效提升材料移除速率，若是試片上生成氧化物幾乎完全磨除，會磨到下方的碳化矽基板，使材料移除率上升。經由實驗發現微波時間增長會使表面氧化物生成增加，在拋光時間拉長，所有氧化處理之碳化矽材料移除率皆下降時，最長的微波氧化時間獲得最高的材料移除率。最後使用AFM量測微波拋光後表面粗糙度與觀察表面形貌，與無微波拋光製程之數據進行比較，顯示累積拋光時間為120分鐘時，微波氧化拋光碳化矽之表面粗糙度由10.3801 nm降為1.6257 nm，粗糙度下降趨勢與表面優化效果比無微波氧化拋光還要優秀。;In this study, the surface oxidation of single crystal silicon carbide was accelerated by microwave to improve the polishing efficiency of single crystal silicon carbide. The microwave oxidation solution was made by using a 1:1 ratio of hydrogen peroxide to water, and the silicon carbide was soaked and heated in a microwave oven. The hydrogen peroxide solution and the nature of silicon carbide as a dielectric material were used to rapidly warm up and oxidize the surface, resulting in the formation of soft oxides on the surface, thus enhancing the polishing rate and optimizing the surface quality. The study used XPS, TEM and Mapping to analyze the materials generated on the surface of silicon carbide after microwave oxidation. It was found that the peak intensity of oxygen elements and the percentage of oxygen content on the surface of microwave oxidized silicon carbide were higher than those of room temperature oxidized and non-oxidized silicon carbide. The highest material removal rate of 1.31 µm/hr was obtained at 10 min microwave polishing for 5 min, indicating that the oxide generation is effective in increasing the material removal rate. The longest microwave oxidation time resulted in the highest material removal rate when the polishing time was extended and the removal rate of all oxidized silicon carbide materials decreased. Finally, AFM was used to measure the surface roughness and observe the surface morphology after microwave polishing, and compared with the data of the process without microwave polishing, it showed that the surface roughness of microwave oxidation polished silicon carbide decreased from 10.3801 nm to 1.6257 nm at an accumulated polishing time of 120 minutes.
