在本論文中，我們使用 WIN 0.25-µm GaN HEMT 製程設計應用於 3.5-GHz 之功率合成放大器，以及使用 WIN 0.15-µm GaAs pHEMT 製程來實現毫米波頻段之功率合成放大器。 在第二章，我們設計一個應用於 3.5-GHz 的功率合成放大器，操作頻率範圍為 3.3 GHz 至 3.8 GHz 。本電路是由兩個單路功率放大器藉由具阻抗轉換功能之 Wilkinson 功率分配器及功率合成器組成。我們使用 RO4003C 高頻電路板實現此 Wilkinson 功率分配器及功率結合器，並藉由鎊線與功率放大器做連結。首先我們先量測單路的功率放大器，量測結果顯示其小訊號在 3.3- 3.8 GHz 的操作頻率範圍內，增益皆超過 14 dB，輸入返回損耗則大於 9.7 dB。接著我們將單路功率放大器與 Wilkinson 功率分配器與功率合成器組裝為功率合成放大器，其小訊號增益及輸入返回損耗分別大於 13.5 dB 及 17.5 dB ，在 3.5 GHz 下的大訊號量測，OP1dB 及在 OP1dB 下的 PAE 分別為 37.3 dBm 及 40.9% 。 在第三章，我們設計一個應用於毫米波頻段之功率合成放大器，操作頻率設計在 37 GHz 至 40 GHz，本電路亦使用具阻抗轉換功能之 Wilkinson 功率分配器及功率合成器，將兩個單路功率放大器進行功率的結合。由於本章節之操作頻率在毫米波頻段，因此我們以傳輸線的方式實現此電路。量測結果小訊號的響應往低頻偏移，在 26.8 GHz 的增益為 8.8 dB ，而輸入返回損耗及輸出返回損耗則是大於 7.2 dB 及 14.9 dB。我們選擇增益峰值高的頻率 26.8 GHz 量測大訊號，在 26.8 GHz 時， OP1dB 及在 OP1dB 下的 PAE 分別為 22.3 dBm 及 20%。;In this paper, we use the WIN 0.25-µm GaN HEMT (high electron mobility transistor) process to design a power combine ampli fiers for 3.5 GHz and use the WIN 0.15-µm GaAs pHEMT (pseudomorphic high electron mobility transistors) process to realize power combine amplifi ers in the millimeter wave frequency bands. In the second chapter of this paper, we design a power combine amplifi er for 3.5-GHz operation in the 3.3 GHz to 3.8 GHz frequency range. This circuit is composed of two single-way power amplifi ers with Wilkinson power divider and power combiner. The Wilkinson power divider and power combiner with the impedance transforming structure are used for power combining. The Wilkinson power divider and power combiner are realized by using RO4003C high frequency two-layer board of off chip. It will finally connect with the power amplifi er by way of pound wire. First we measure the single way power amplifi er. The measurement results show that the small signal is within the operating frequency range of 3.3 -3.8 GHz, the gain and input return loss are greater than 13.5 dB and 17.5 dB. Then we measure the power combine amplifi er of this circuit. The measurement results show that the small signal is within the operating frequency range of 3.3 -3.8 GHz, the gain and input return loss are greater than 13.5 dB and 17.5 dB, respectively, and the large signal is at 3.5 GHz, OP1dB and the following PAE are 37.3 dBm and 40.9%. In the third chapter of this paper, we also use the WIN 0.15-µm GaAs pHEMT process to design a power amplifi er applied in the 5G millimeter wave frequency band with an operating frequency range of 37 GHz to 40 GHz. This circuit also uses a Wilkinson power divider and a power combiner with impedance transforming structure, combine the power from the two single-way power amplifi ers. Since the operating frequency of this chapter is in the millimeter wave band, we implement this circuit in the form of a transmission line. The measurement results show that the gain at 26.8 GHz is 8.8 dB, while the input return loss and output return loss are greater than 7.2 dB and 14.9 dB. We choose the frequency with high gain peak at 26.8 GHz to measure large signals. At 26.8 GHz, the PAE of OP1dB and OP1dB are 20% and 22.3 dBm.
