使用集總元件Wilkinson功率合成器之3.5-GHz氮化鎵功率放大器;A 3.5-GHz GaN Power Amplifier with Lumped-Element Wilkinson Power Combiner

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/90102

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/90102

Title:	使用集總元件Wilkinson功率合成器之3.5-GHz氮化鎵功率放大器;A 3.5-GHz GaN Power Amplifier with Lumped-Element Wilkinson Power Combiner
Authors:	王文辰;Wang, Wen-Chen
Contributors:	電機工程學系
Keywords:	氮化鎵;sub-6;功率合成放大器;集總電路;威爾金森功率分配器;GaN;sub-6;power combine amplifier;lumped element;Wilkinson power divider
Date:	2022-09-07
Issue Date:	2022-10-04 12:11:10 (UTC+8)
Publisher:	國立中央大學
Abstract:	在第五代行動通訊網路的時代中，其目標為提高資料的傳輸速率、減少延遲時間，並提高資料容量與支援大規模通訊裝置連接，為達到次世代行動通訊系統的願景，不論是在實體層、媒體存取控制層、網路層、或應用層，都需要更先進的技術。在本論文中，我們將設計 sub-6 GHz 之功率合成放大器，使用 WIN 0.25-µm GaN HEMT 製程來實現。在本論文第二章中，我們將使用 WIN 0.25-µm GaN HEMT 製程來設計一應用於 5G 小型基地台之 3.5-GHz AB 類功率合成放大器，本電路是由兩顆單路功率放大器藉由 Wilkinson 功率分配器及功率合成器做功率結合之功率合成放大器，其中 Wilkinson 功率分配器及功率合成器我們使用 on chip 的方式實現，晶片面積為 1×2 mm2，此電路操作頻率範圍為 3.3 GHz 至 3.8 GHz 。功率合成放大器小訊號模擬結果顯示，其小訊號在 3.3 GHz 至 3.8 GHz 的操作頻率範圍內，增益及輸入返回損耗分別大於 11.9 dB 及 10.6 dB ，輸出返回損耗皆大於 7.6 dB 。而大訊號在 3.5 GHz 頻段下，OP1dB 及在 OP1dB 下的 PAE 分別為 38.2 dBm （6.6 W）及 53 % ，而在 OP1dB 下的 DE 則為 56.3 %。在本論文第三章中，我們將進行功率合成放大器量測與電路偵測及重新模擬，量測結果顯示在 3.3－3.8 GHz 的操作頻率範圍內，增益及輸入返回損耗分別大於 10.6 dB 及 12.4 dB ，輸出返回損耗皆大於 7.8 dB 。而在 3.5 GHz 下， OP1dB 及在 OP1dB 下的 PAE 分別為 35.1 dBm（3.2 W）及 33.1 % ，而在 OP1dB 下的 DE 則為 35.5 %，量測結果都有符合應用於 5G 小型基地台發射端主動式相位陣列之功率放大器性能目標。 ;The advent of the fifth-generation mobile communication network will provide greater data volume and higher. The transmission rate, shorter latency, and support for more communication device connections. In order to achieve the vision of the next-generation mobile communication system, whether in the physical layer, media access control layer, network layer, or application layer all require more advanced technology. In this paper, we will design power amplifiers in the sub-6 GHz, respectively, using the WIN 0.25-µm GaN HEMT process to achieve. In the second chapter of this paper, we use the WIN 0.25-µm GaN HEMT process to design a 3.5-GHz power combine amplifier for 5G small-cell base stations, with an operating frequency range of 3.3 GHz to 3.8 GHz. This circuit is composed of two single-stage power amplifiers. The power divider and power combiner of the impedance Wilkinson transforming structure are used for power combining. The power divider and power combiner of impedance transforming Wilkinson are maded with on chip, and the chip area is 1×2 mm2. The simulation results of power combine amplifier show that the small signal is within the operating frequency range of 3.3--3.8 GHz, the gain and input return loss are greater than 11.9 dB and 10.6 dB, and the output return loss are greater than 7.6 dB respectively, and the large signal is at 3.5 GHz, OP1dB and OP1dB The following PAE are 38.2 dBm (6.6 W) and 53 %, OP1dB the following DE is 56.3 % In the third chapter of this paper, we will perform power combine amplifier measurements and circuit detection and re-simulation. The measurement results show that the small signal of the single power amplifier is within the operating frequency range of 3.3--3.8 GHz, the gain and input return loss are respectively greater than 10.6 dB and 12.4 dB, and the large signal at 3.5 GHz, the PAE under OP1dB and OP1dB are 35.1 dBm (3.2 W) and 33.1 %, OP1dB the following DE is 35.5 % .The measurement results are in line with the power amplifier performance target of the active phased array at the transmitting end of the 5G small-cell base stations.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	51	View/Open

社群 sharing

Loading...