平台式三累增層砷化銦鎵/砷化銦鋁單光子崩潰二極體陣列之設計;Design of Mesa-type InGaAs/InAlAs Single-Photon Avalanche Diodes Array with Triple Multiplication Layers

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Title:	平台式三累增層砷化銦鎵/砷化銦鋁單光子崩潰二極體陣列之設計;Design of Mesa-type InGaAs/InAlAs Single-Photon Avalanche Diodes Array with Triple Multiplication Layers
Authors:	陳嘉彥;Chen, Chia-Yen
Contributors:	電機工程學系
Keywords:	單光子崩潰二極體陣列
Date:	2022-09-28
Issue Date:	2022-10-04 12:13:21 (UTC+8)
Publisher:	國立中央大學
Abstract:	近年來，因為從遠距感測、三維成像到金融與資訊安全的需求不斷擴大下，有許多研究致力於高靈敏度光偵測器的開發，單光子崩潰二極體因其增益無窮大的特性，可偵測單光子等級，遂成為了光達、光量子通訊與光量子電腦應用中最有潛力的後端偵測器。以三五族化合物半導體製成的單光子崩潰二極體可感測近紅外光纖通訊波段，在光達應用中可確保人眼安全，亦提升偵測距離；再者，若能利用單光子崩潰二極體進一步演示光子數目解析，定能促進光量子科學之應用與發展。本文致力於單一單光子崩潰二極體元件至陣列之開發，因此我們在元件設計上針對累增層做特殊設計，使得累增層內電場呈三層階梯分佈，旨在降低穿隧效應、提升時間表現並降低缺陷所致後脈衝效應。我們製作了4X4平台式單光子雪崩偵測器陣列，相較於平面式的結構而言製作上較為簡單，且元件的均勻性較高。此外，針對陣列內所有元件的電性探討製程良率與均勻性，結果可得到高度均勻的崩潰電壓"43.1±0.1 V" 及崩潰電流"20.8±3.7 nA" ，將我們的元件與文獻相比，暗計數至多降低約一個數量級。此外，在溫度250 K下，元件的單光子偵測效率為50 %，而串音機率則為8.43 %。未來期望可藉由陣列的高均勻性，擴大陣列內中像素的數量，提高光偵測效率，並與輸出積體電路整合，來實現光達的應用並且以空間復用的方法實現光子數目解析。 ;Recently, since the application needs from remote sensing, three-dimensional imaging to information and financial security grows rapidly, the development of highly sensitive detectors receives much research interest. Among those detectors, single-photon avalanche diodes (SPAD) capable of detecting single photon due to their infinite gain become the most potential receivers for the applications of light detection and ranging (LiDAR), photonic quantum communication and quantum computing. The SPAD based on III-V compound semiconductors that can detect near infrared light including the fiber communication bands can be found their applications in LiDAR with eye-safety and improved ranging distance. Furthermore, the sensor exhibiting photon number resolving capability can also facilitate the application and development of photonic quantum science. This work aims to develop a high performance SPAD and finally carry out a focal plane array. We bring a novel structure design to the SPAD by introducing a three stepwise electric field distribution to the multiplication layer, which helps to reduce the tunneling effect, improve timing characteristics and reduce the afterpulsing effect induced by the defects. As compared with planar-type, mesa-type is simpler to fabricate and has higher uniformity. Thus, We have fabricated a 4X4 mesa-type SPAD array and studied the yield and uniformity of each SPAD pixels. The results show that our SPAD has high uniformity from pixel to pixel, whose breakdown voltage and breakdown current is respectively 43.1± 0.1 V and20.8± 3.7 nA. As compared with the literature, the dark count rate is reduced by at most one order of magnitude. At the temperature of 250 K, the SPDE of 50% and the crosstalk probability of 8.43 % are obtained. In the future, enlarging the pixel cluster is envisioned due to the high pixel uniformity in the array, which could elevate the single photon detection efficiency. After integrating with a read-out IC, a hybrid SPAD image sensor can be used for the application of LiDAR and is possible to further perform photon number resolving by the spatial multiplexing scheme.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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