微小化雙頻阻抗匹配網路於雙頻放大器設計之應用;Design of dual-band amplifiers using miniature dual-band impedance matching network

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 博碩士論文 > Item 987654321/90164

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题名:	微小化雙頻阻抗匹配網路於雙頻放大器設計之應用;Design of dual-band amplifiers using miniature dual-band impedance matching network
作者:	周靖軒;Chou, Jing-Xuan
贡献者:	電機工程學系
关键词:	雙頻;低雜訊放大器;功率放大器;阻抗匹配;異質整合;砷化鎵;dual-band;low-noise amplifier;power amplifier;impedance matching;heterogeneous integration;GaAs
日期:	2022-09-29
上传时间:	2022-10-04 12:13:28 (UTC+8)
出版者:	國立中央大學
摘要:	本研究使用以雙頻橋式T線圈為基礎之微小化雙頻阻抗匹配網路，實現可同時於2.45 / 5.5 GHz操作之雙頻低雜訊放大器與雙頻功率放大器，期能應用於IEEE 802.11 WLAN系統之2.4和5 GHz頻帶。首先，雙頻低雜訊放大器使用cascode架構搭配源極退化電感，並以雙頻阻抗匹配電路在兩頻率同時達成雜訊與阻抗匹配。電路以TSMC 0.18-μm CMOS與AFS Corp. IPD覆晶異質整合製程實現，整體電路面積為2.85 mm × 1.75 mm。在2.45 / 5.5 GHz之實測小訊號增益為15.6 / 12.1 dB，輸入、輸出反射係數皆大於10 dB，雜訊指數為2.6 / 2.8 dB，IP1dB為-18 / -14 dBm，IIP3為-5.5 / -2 dBm，於1.8 V之VDD下，功耗為11.9 mW。其次，雙頻功率放大器操作於Class-AB模式，並採用雙頻阻抗匹配電路於兩頻率達到最大功率輸出。電路以WIN 0.15-μm pHEMT GaAs製程實作，晶片面積為2.5 mm × 2.0 mm。在2.45 / 5.5 GHz之實測輸入反射損耗為11.9 / 11.9 dB，小訊號增益為12.9 / 9.3 dB，Psat為24.3 / 24.6 dBm，PAE峰值為31.4 / 32.6 %。而在以IEEE 802.11ac系統之16-QAM調變訊號進行實測的結果方面，於符合系統EVM規格與頻譜遮罩規範下，在2.45 / 5.5 GHz之最大輸出功率為19.1 / 20.3 dBm，此時之EVM為-27.3 / -27.4 dB，ACPR則為-29.0 / -28.6 dBc。透過上述兩種雙頻放大器設計，本研究成功驗證以雙頻橋式T線圈為基礎之雙頻匹配電路的可行性。;This study presents 2.45 / 5.5 GHz concurrent dual-band low-noise amplifier (LNA) and dual-band power amplifier (PA) designs that employ dual-band bridge-T coil-based miniature dual-band impedance matching network. The proposed concurrent dual-band amplifiers are targeted for application in the 2.4- and 5-GHz bands of the IEEE 802.11 WLAN system. First, the proposed dual-band LNA adopts the cascode common source inductive degeneration topology, and dual-band impedance matching circuits are employed to achieve simultaneous noise and impedance matching at two operation frequencies. The proposed 2.45 / 5.5-GHz dual-band LNA is implemented through the heterogeneous integration of TSMC 0.18-μm CMOS and AFS Corp. integrated passive device (IPD) technologies, and the overall circuit size is 2.85 mm × 1.75 mm. At 2.45 / 5.5 GHz, the measured small signal gain is 15.6 / 12.1 dB, the measured input and output return loss are better than 10 dB, the measured noise figure is 2.6 / 2.8 dB, while the measured input P1dB and input IP3 are -18 / -14 dBm and -5.5 / -2 dBm, respectively. The measured power consumption under a VDD of 1.8 V is 11.9 mW. Next, the proposed dual-band PA is operated in the class-AB mode, and it utilizes dual-band impedance matching circuits to achieve maximal output power delivery at the two operation frequencies. The proposed 2.45 / 5.5-GHz dual-band PA is implemented in WIN 0.15-μm pHEMT GaAs technology, and the chip area is 2.5 mm × 2.0 mm. The measurement output power is 24.3 / 24.6 dBm while the peak power added efficiency (PAE) is 31.4 / 32.6 % at 2.45 / 5.5 GHz. The measured small signal gain and input return loss are 12.9 / 9.3 dB and 11.9 / 11.9 dB at 2.45 / 5.5 GHz, respectively. Under the IEEE 802.11ac EVM and transmit spectrum mask specifications, the maximum output power for 16-QAM modulation is 19.1 / 20.3 dBm, while the EVM and ACPR are -27.3 / -27.4 dB and -29.0 / -28.6 dBc, respectively. Through these two dual-band amplifier design examples, this study proves the feasibility of dual-band bridge-T coils for dual-band impedance matching network designs.
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