隨著電動車、5G、新型半導體產業之興起，第三代化合物半導體逐漸在市場上成為眾所矚目的新焦點，其中SiC擁有優良熱傳導性、高電子漂移速度、高擊穿電場強度、化學穩定性及能隙寬度，已成為下一代高頻率、高功率半導體元件中最關鍵的材料之一。但是，由於其高硬度和高化學惰性，碳化矽是最難加工的材料之一，如何有效地獲得光滑、沒有任何損壞的SiC表面，仍然是商用的SiC晶圓製造一個很大的技術瓶頸。本篇論文主要目標為使用高絕緣Semi SiC於煤油中之線放電切割取代傳統鑽石線鋸切割，使用非接觸式的方法能較佳的控制切割表面粗糙度，並且放電加工是以電能熱熔融的方式對材料進行加工，能夠使用較細的線徑控制切口徑，以期能夠降低切割時的材料損失。;With the rise of electric vehicles, 5G and new semiconductor industries, the third-generation semiconductors have gradually become a new focus in the market. Among them, SiC has excellent thermal conductivity, high electron drift velocity, high disruptive filed intensity and chemical stability. It has become one of the most critical materials in the next generation of high-frequency, high-power semiconductor components. However, due to its high hardness and high chemical inertness, silicon carbide is one of the most difficult materials to process. How to effectively obtain a smooth and no damage SiC surface is still a big technical bottleneck for commercial SiC wafer fabrication. The main goal of this thesis is to replace the traditional diamond wire saw cutting with wire electrical discharge cutting on non-conductive semi SiC in kerosene. The non-contact method can control the cutting surface roughness better. The work piece is thermally melted by electrical discharge energy, and a thinner-diameter wire can be used to control the cutting kerf. The material is processed in this way, in order to reduce the material loss during cutting.
