以脈衝式磁控濺鍍法製作氧化銦鎵鋅薄膜電晶體之研究;Research on the Fabrication of Indium Gallium Zinc Oxide Thin-film-transistor by Pulsed Magnetron Sputtering

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/92376

Title:	以脈衝式磁控濺鍍法製作氧化銦鎵鋅薄膜電晶體之研究;Research on the Fabrication of Indium Gallium Zinc Oxide Thin-film-transistor by Pulsed Magnetron Sputtering
Authors:	林育鴻;Lin, Yu-Hung
Contributors:	光電科學與工程學系
Keywords:	氧化銦鎵鋅;脈衝式磁控濺鍍;薄膜電晶體;IGZO;HiPIMS;TFT
Date:	2023-08-08
Issue Date:	2024-09-19 15:48:31 (UTC+8)
Publisher:	國立中央大學
Abstract:	近年來受新冠疫情影響，人類生活方式有著重大轉變，在減少人與人直接接觸的同時，仍需兼顧正常的資訊交流，因此需更多視訊顯示設備；以及智慧、自駕車在市場上關注度日漸攀升，連帶汽車內部相關顯示器需求提高。發展至今，多數顯示器仍依賴技術成熟且成本低廉的a-Si TFT LCD為主，然而a-Si材料有者致命的缺點，在於其載子遷移率無法提升，來滿足高端顯示器產品需求，因此科研人員積極尋覓其他材料做替換，有各種新興材料被提出與研究，其中就屬IGZO表現最為出色，能有高遷移率、低漏電流、均勻性和適合低溫製程等優勢。本論文研究主軸會分為兩部分，第一部分會以脈衝式磁控濺鍍法沉積IGZO薄膜，透過調變UV光照基板的時間以及薄膜氧氣通量，並利用Hall、XRD與AFM量測證明，利用此方法能製作出載子濃度高，且表面粗糙度低的高品質薄膜；第二部份，則是將濺鍍的高品質薄膜，藉由黃光微影製程為薄膜電晶體，首先會去調製最合適的氧氣通量與通道層厚度，最後會將通道層分為雙層，進一步優化元件載子遷移率以及On/Off ratio。;In recent years, the COVID-19 pandemic has significantly changed human lifestyles, reducing direct contact between people but increasing the requirement to exchange information through video display devices. The great attention of smart and self-driving cars has also increased the demand of displays for automobiles. So far, due to its maturity and low cost, a-Si TFT LCD has been the most common display technology. However, the low carrier mobility of a-Si cannot meet the requirement of high-end display applications. As a result, researchers are actively exploring alternative materials, Among the various emerging materials, IGZO has demonstrated the best performance of its high carrier mobility, low leakage current, high uniformity, and low-temperature processability. In this research, the IGZO thin films deposited by pulsed magnetron sputtering are shown in the first part. The results show that by varying the time of UV irradiation on the substrate and the oxygen flux through the thin films, high quality thin films with low surface roughness and high carrier concentration can be achieved by using Hall, XRD, and AFM measurements. In the second part of the research, the high quality sputtered film is fabricated into thin film transistors using a lithography process. Adjusting the oxygen flux, the thickness of the channel layer, and the channel layer into two layers, the optimal carrier mobility and on/off ratio of the device has been achieved.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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