奈米壓印技術製作全介電光學繞射元件;Nanoimprint technology for manufacturing all-dielectric diffractive optical element

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題名:	奈米壓印技術製作全介電光學繞射元件;Nanoimprint technology for manufacturing all-dielectric diffractive optical element
作者:	劉遠袖;Liu, Yuan-Hsiu
貢獻者:	光電科學與工程學系
關鍵詞:	奈米壓印技術;繞射光學元件;Nanoimprint technology;Diffractive optical element
日期:	2023-12-21
上傳時間:	2024-09-19 15:54:07 (UTC+8)
出版者:	國立中央大學
摘要:	本篇論文目的是利用奈米壓印技術製作相位光柵的結構，利用奈米壓印技術來取代傳統曝光機和電子束微影的曝光方式，來達到節省成本和大面積製作的優點。實驗中主要用熱壓成型奈米壓印和步進感光成形奈米壓印來製作相位光柵，找到最佳的奈米壓印參數成功將結構的圖案從矽基板轉印到鍍有 TiO2薄膜的基板上。而本次實驗會使用新型旋塗式玻璃 SOG Ti-452 來生成 TiO2的薄膜，用來取代傳統的薄膜沉積系統。本論文最後蝕刻出 TiO2的光柵結構其高度約為 212nm，與模擬優化出最佳的結構高度202nm 誤差只有 4.9%，量測完繞射光學元件的一階繞射點能量其均勻度高達 85.14%，而與模擬繞射點均勻度為 80.68%十分接近，在結構高度 214nm的範圍內，繞射點的能量大小和整體的均勻度會隨著結構高度上升而有顯著的提升。接著是量測利用奈米壓印和 SOG 製作的光柵結構，蝕刻後的結構高度約為 214nm，但部分結構的側壁產生約 40 度的傾角使繞射點的均勻度不佳，經量測其一階繞射點的均勻度仍然有高達 84.69%，發現利用奈米壓印和 SOG 製作出來的相位光柵具有良好的繞射效果。;The purpose of this paper is to use Nanoimprint Lithography to fabricate structures for phase gratings, in order to replace conventional exposure like Photolithography and Electron Beam Lithography. The objective is to achieve cost savings and enable large-area production. The experiment primarily employs Thermal Nanoimprint Lithography and UV Nanoimprint Lithography to create the phase grating. Optimal nanoimprint parameters were identified to successfully transfer the patterned from silicon to a substrate coated with a TiO2 film. In this study, spin-on-glass material” SOG Ti-452” is used to generate the TiO2 film, replacing traditional film deposition systems. The paper concludes by etching the TiO2 structure of grating, the height is approximately 212nm, with only a 4.9% deviation from the optimized structure height of 202nm obtained through simulations. Measurement of the first-order diffraction point energy of the phase grating showed a high uniformity of 85.14%, and it is very close to the simulated diffraction point uniformity of 80.68%. As the structure height increases within the 214nm range, there is a significant enhancement in both the energy of diffraction points and overall uniformity. Subsequent measurements were conducted on the grating structure fabricated using nanoimprint and SOG techniques. After etching, the structure height was around 214nm, and sidewalls showing an inclination of approximately 40 degrees, resulting in suboptimal uniformity of diffraction points. However, even with this deviation, the measured uniformity of the first-order diffraction point remained high at 84.69%. This suggests that phase gratings produced using nanoimprint and SOG techniques exhibit well diffraction effects.
顯示於類別:	[光電科學研究所] 博碩士論文

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