| 摘要: | 本論文使用電漿輔助原子層沉積技術鍍製抗反射膜於PMMA基板，在低溫製程70°C下前驅物使用TDMAT及3DMAS分別鍍製TiO2及SiO2，使用電漿模式通入氧氣混合氬氣做為氧化方式，在單層膜下探討折射率(n)及消光係數(k)之趨勢找出最佳製程參數與條件，塑膠基板本身是軟性基材，因此在鍍製多層膜中使用 150W 及 100W 容易造成基板表面受到離子轟擊影響產生損傷形成裂痕，因此實驗中 則選用 50W 做為鍍製抗反射膜之條件。透過量測儀器來分析其單層膜及多層膜之結構，X 光繞射儀器來 確認其 TiO2 薄膜結構之組成，隨著 ALD 循環次數(膜厚)提高其結晶 強度從 82 上升至 117，使用原子力顯微鏡來探討薄膜表面之粗糙度，其平均粗糙度約為0.28nm顯示出薄膜表面相當平坦，因此在 TiO2單層膜中處於微結晶狀態，多層膜使用高解析掃描穿透式電子顯微鏡觀察抗反射膜之結構來驗證與Macleod模擬軟體所設計的層數皆相符。利用奈米複合層在單層膜中插入抑制層能有效降低其結晶現象來降低薄膜之應力，透過恆溫恆濕機台在惡劣環境下觀察其薄膜變化及時間耐久性，環境測試條件設定在溫度 85°C及濕度85%，在未插入抑制層的抗反射膜能延長至998小時，有插入 4層1.5nm SiO2的抗反射膜僅能維持在209 小時，從結果表明 TiO2 隨著插入層數增加無明顯改善應力，反而TiO2隨厚度遞減使薄膜偏向不緻密性在高濕度下水氣容易侵蝕薄膜，在未插層中TiO2薄膜相對厚因此緻密性足夠因而有較低WVTR，對於整體抗反射膜能有較佳的耐久性。;In this study, plasma-assisted atomic layer deposition technology was employed to coat an anti-reflective film on a PMMA substrate. The precursors, TDMAT and 3DMAS, were used respectively for the deposition of TiO2 and SiO2 films at a low temperature of 70°C. The plasma mode introduces a mix of oxygen and argon for oxidation. The refractive index (n) and extinction coefficient (k) trends in the single-layer film were examined to determine optimal process parameters and conditions. Given that the plastic substrate is soft, using power settings of 150 watts and 100
watts for multi-layer coatings can lead to substrate surface damage and crack formation due to ion bombardment. As a result, a 50-watt setting was chosen for anti-reflection film deposition in these experiments. The structures of single and multi-layer films were analyzed using measurement instruments, with the composition of the TiO2 film structure confirmed via X-ray diffraction. As the number of ALD cycles (indicative of film thickness) increased, its crystallization strength rose from 82 to 117. Atomic force microscopy revealed a film surface roughness of approximately 0.28 nm, indicating a notably flat surface. Hence, the single layer TiO2 film exhibits a microcrystalline state. The multi-layer film structure, in contrast, was verified to match the layer count predicted by Macleod simulation software when examined using a transmission electron microscope. By incorporating an inhibition layer within the nano-composite layer of a single film, the crystallization phenomenon can be effectively reduced, subsequently lowering the stress on the film. The film′s changes and durability under harsh conditions were observed using a constant temperature and humidity machine, with test conditions set at 85°C and a
humidity of 85%. Anti-reflective films without the inhibition layer lasted up to 998 hours. In contrast, anti-reflective films with four inserted layers of 1.5nm SiO2 only persisted for 209 hours. The results show that the stress on the TiO2 does not show significant improvement with increasing insertion layers. Instead, the thickness of TiO2 decreases, causing the film to become less dense. In high humidity, the film is easily eroded by moisture. The relatively thicker TiO2 film in non-inserted layers is denser, resulting in a lower WVTR, thus providing better durability for the anti reflective film. |
