以InGaN/GaN量子井感測 DNA;InGaN/GaN quantum well DNA sensing

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/93410

Title:	以InGaN/GaN量子井感測 DNA;InGaN/GaN quantum well DNA sensing
Authors:	郭子源;Guo, Zi-Yuan
Contributors:	光電科學與工程學系
Keywords:	氮化鎵/氮化鎵;多重量子井;DNA;InGaN/GaN;multiple quantum wells;DNA
Date:	2023-11-14
Issue Date:	2024-03-05 17:25:08 (UTC+8)
Publisher:	國立中央大學
Abstract:	本研究主旨在探討InGaN/GaN多重量子井（multiple quantum wells, MQW）的電子特性，並評估其在DNA感測的應用潛力。晶片樣本有三層QW (3QW)及五層QW (5QW)兩種，我們使用電流-電壓（IV）曲線觀察不同濃度 DNA 產生的表面電流。我們發現，當DNA濃度從1E-7 M提升到 1E-3M後，量子井表面的電流會減少，這是因為DNA帶負電，會推開QW內的高濃度電子。;The main focus of this study is to explore the electronic properties of multiple quantum wells (MQW) in InGaN/GaN materials, and to evaluate its potential in DNA detection. There are two samples, consisting of three QWs (3QW) and five QWs (5QW). We employed current-voltage (IV) curves to observe the correlation between DNA concentration and surface currents. When the DNA concentration increases on the sample surface, we observed decreased current flows, which is due to the electron depletion in MQW by the negatively charged DNA.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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