基於基板合成波導半模共振器之三工器與雙工威爾金森功率分波器;Triplexer and Diplexing Wilkinson Power Divider Based on Half-mode SIW Cavity

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題名:	基於基板合成波導半模共振器之三工器與雙工威爾金森功率分波器;Triplexer and Diplexing Wilkinson Power Divider Based on Half-mode SIW Cavity
作者:	陳泓佑;Chen, Hung-Yu
貢獻者:	電機工程學系
關鍵詞:	基板合成波導;三工器;功率分波器;SIW;Triplexer;Power Divider
日期:	2024-01-18
上傳時間:	2024-09-19 17:21:01 (UTC+8)
出版者:	國立中央大學
摘要:	本論文提出了基於基板合成波導半模共振器的微小化三工器與雙工三頻帶威爾金森功率分波器的設計。文中三工器與功率分波器分別利用基板合成波導半模三模態與雙模態共振器做為第一級共振電路，透過給予適當的長寬比，使得半模共振器的前三個共振模態分別為TE101、TE301與TE102。其中，在三工器中，半模共振器之TE101及TE301的操作頻率可以透過調整共振器之長寬比加以控制，使其分別操作於3 GHz和4.5 GHz，並利用上層金屬之微擾槽孔獨立控制半模共振器的TE102模態，使其操作於3.75 GHz，再透過結合半模及四分之一模單模態腔體，達到良好的止帶表現以及微小化的效果。另外，雙工功率分波器的部分則是利用半模共振器的前兩個模態，TE101及TE301，分別操作於3 GHz和4.5 GHz，在兩個頻率下透過單輸入雙輸出的電路結構，達到功率分波的效果，並且在輸出之間加上100歐姆電阻以提高通帶內隔離度。最後，透過在雙工功率分波器的高頻頻道加上帶止共振器，在通帶內加入傳輸零點，使原本的單通帶響應分割為雙通帶響應，進而達到雙工三頻帶功率分波的效果，最終實現單層多種電路特性結合之電路，而三個通帶的中心頻率分別是3 GHz、4.25 GHz和4.55 GHz，零點位置則在4.4 GHz。本論文皆對所有電路提供量測數據與模擬結果之比較。;This thesis presents compact triplexer and diplexing tri-band Wilkinson power divider based on substrate integrated waveguide half-mode resonator. The proposed triplexer and power divider respectively utilize a substrate integrated waveguide half-mode triple-mode and a dual-mode resonator as the first order resonant cavity. By properly giving the length and width of the resonator, the first three modes of the resonator would be TE101、TE301 and TE102 mode. For the triplexer, the operating frequencies of TE101 and TE301 mode, which are controlled by the width and length of the resonator, are at 3 GHz and 4.5 GHz, and by utilizing perturbation slot at the top metal layer, the operating frequency of TE102 mode can be controlled individually, which is designed at 3.75 GHz. The triplexer features compact size and good stop band performance by combining half-mode and quarter-mode cavity. On the other hand, the proposed diplexing power divider utilize the first two modes, TE101¬ and TE301, which are operating at 3 GHz and 4.5 GHz, respectively. By the structure of single input and double output which implement the power division at both channel, and by placing resistors of 100-ohm between output ports to obtain good in-band isolations. Finally, by adding bandstop resonators at the second channel to introduce an extra transmission zero, it separates the single-band response at the higher frequency into a dual-band response to implement a diplexing tri-band power divider, which features a component of single layer of multi-functional combination. Three passbands are located at 3 GHz、4.25 GHz and 4.55 GHz, respectively. A transmission zero is set to be at 4.4 GHz. To validate the design concept, the proposed triplexer and power divider are designed, fabricated and measured.
顯示於類別:	[電機工程研究所] 博碩士論文

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