本研究以微波對單晶碳化矽進行處理，以利於後續的拋光處理，有效提升單晶碳化矽的拋光效率。使用XPS、TEM及Mapping分析微波後碳化矽表面元素。使用精密天平量測碳化矽表面移除重量，計算移除速率。最後使用AFM量測未拋光試片、廠商提供的化學機械拋光(CMP)商用試片做對比。;This study investigates the treatment of single crystal silicon carbide using microwaves, facilitating subsequent polishing and effectively improving the polishing efficiency of single crystal silicon carbide. XPS, TEM, and Mapping were used to analyze the surface elements of silicon carbide after microwave treatment. The removal weight of the silicon carbide surface was measured using a precision balance to calculate the removal rate. Finally, AFM was used to measure the surface roughness of unpolished samples, commercially available Chemical Mechanical Polishing (CMP) samples provided by manufacturers.
