CMOS MEMS電容式磁感測器設計與應用;DESIGN AND APPLICATION OF CMOS MEMS CAPACITIVE MAGNETIC SENSOR

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题名:	CMOS MEMS電容式磁感測器設計與應用;DESIGN AND APPLICATION OF CMOS MEMS CAPACITIVE MAGNETIC SENSOR
作者:	楊鈺琳;Yang, Yu-Lin
贡献者:	機械工程學系
关键词:	CMOS MEMS;磁感測器;勞倫茲力;磁力計應用;CMOS MEMS;magnetometer;Lorentz force;magnetometer applications
日期:	2023-07-13
上传时间:	2024-09-19 17:32:39 (UTC+8)
出版者:	國立中央大學
摘要:	此研究為三軸電容式磁力計之設計，採用 UMC 0.18 um CMOS 製程完成機械結構與讀取電路，藉由 MEMS 後製程產生懸浮結構，經由勞倫茲力和電磁力作用於晶片上產生結構位移，使其感測電容發生變化。勞倫茲力作動下 X、Y、Z 三軸靈敏度為 0.13 V/T、0.16 V/T 及 11.52 V/T，在電磁力作用下，Z 軸靈敏度為 0.01 V/T，而最小量測磁場為40 uT。本設計在感測器上方加入導磁材料使出平面感測磁場增加，勞倫茲力也隨之增強，最終Z軸靈敏度增加約60%。此感測器能當作電流感測器，通過導線周圍產生的磁場來判斷電流大小，以及利用勞倫茲力中磁場與電流角度關係進行關節角度量測，並期許後續開發更多應用。;This research is the design of a three-axis capacitive magnetometer, UMC 0.18 um CMOS process is used to complete the mechanical structure and readoutcircuits, and suspended structure was created by post-MEMS process. Structural displacement occurs on the chip through Lorentz force and electromagnetic force, which changes the sensing capacitance. Under the Lorentz force motion, the sensitivity of X, Y, and Z axis is 0.13 V/T, 0.16 V/T and 11.52 V/T. Under the electromagnetic force motion, the sensitivity of Z axis is 0.01 V/T, and the minimum measurement magnetic field is 40 uT. This sensor can be used as a current sensor to measure the magnitude of the current through the magnetic field generated around the wire, and measure the joint angle through the relationship between the magnetic field and the current angle in the Lorentz force, and expect to develop more applications in the future.
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