利用TPBi增益綠光鈣鈦礦電致發光元件效率之分析;Analysis of Efficiency Enhancement Electroluminescent Devices using TPBi in Green Perovskite

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Title:	利用TPBi增益綠光鈣鈦礦電致發光元件效率之分析;Analysis of Efficiency Enhancement Electroluminescent Devices using TPBi in Green Perovskite
Authors:	蘇峻威;Su, Jun-Wei
Contributors:	機械工程學系
Keywords:	鈣鈦礦;1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯;Perovskite;TPBI
Date:	2024-08-15
Issue Date:	2024-10-09 17:27:27 (UTC+8)
Publisher:	國立中央大學
Abstract:	全無機鈣鈦礦材料CsPbBr3是一種半導體材料，不僅具有優異的半導體特性，還具備良好的發光波長可調性、可控的能隙，以及可透過簡易且低成本的製程方式製造等優點。目前，它廣泛應用於太陽能電池、光電感測器與發光元件等領域。本實驗針對鈣鈦礦材料在發光元件中的應用進行研究與分析，並為了未來商業化的需求，製備出具有均勻且大面積的元件，因此採用了單源熱蒸鍍法來製備鈣鈦礦薄膜。本研究延續了實驗室對於CsPbBr3鈣鈦礦材料綠色發光元件的研究。為了改善發光效率，我們透過探討CsPbBr3發光層的厚度並調整退火持溫時間，以提升元件的性能。結果顯示，在薄膜厚度為350nm的情況下，經過100分鐘的退火持溫，可獲得波長529nm、亮度達13320 cd/m2的高亮度發光元件。此外，為了改善元件電流擴散不佳的問題，研究中引入了TPBi電子阻擋層，並發現這樣的設計能獲得波長530nm、亮度12920 cd/m2的發光元件，且電流效率提升至1.92 cd/A，相較於未導入TPBi的元件之電流效率1.3 cd/A有明顯改善。進一步的研究顯示，將TPBi導入的發光元件的電極材料從碳更換為銀後，成功製備出波長為529 nm、亮度達11067 cd/m²的高均勻性發光元件。此外，在不改變製程的前提下，僅需更換電極材料，即可同時製備出CsPbBr₃鈣鈦礦的正式與反式結構發光元件。 ;CsPbBr3, a fully inorganic perovskite material, is a semiconductor with excellent properties. It has a tunable emission wavelength, controllable bandgap, and can be produced using simple and low-cost fabrication methods. Currently, it is widely used in solar cells, optoelectronic sensors, and light-emitting devices. In this study, we focus on the application of perovskite materials in light-emitting devices, analyzing and researching their performance. To meet future commercialization needs, we prepared uniform and large-area devices by using a single-source thermal evaporation method to fabricate perovskite thin films. This study continues our lab′s research on CsPbBr3 perovskite green light-emitting devices. To improve the luminous efficiency, we explored the thickness of the CsPbBr3 emission layer and adjusted the annealing time to enhance the device′s performance. The results showed that with a film thickness of 350 nm and 100 minutes of annealing, we could achieve a high-brightness light-emitting device with a wavelength of 529 nm and brightness of 13,320 cd/m². Additionally, to address the issue of poor current spreading, we introduced a TPBi electron-blocking layer. This design resulted in a light-emitting device with a wavelength of 530 nm, brightness of 12,920 cd/m², and an improved current efficiency of 1.92 cd/A, compared to 1.3 cd/A in devices without TPBi. Further research showed that by replacing the carbon electrodes with silver in TPBi-based devices, we successfully produced a highly uniform light-emitting device with a wavelength of 529 nm and brightness of 11,067 cd/m². Moreover, by simply changing the electrode material, we could fabricate both normal and inverted structures of CsPbBr3 perovskite light-emitting devices without altering the process.
Appears in Collections:	[Graduate Institute of Mechanical Engineering] Electronic Thesis & Dissertation

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