本論文主要研究內容為成長Al/AZO/ZnO/In2Se3/Cu2Se/CIGS/Mo/SLG結構之薄膜太陽能電池(CIGS solar cell)，Al上電極使用電子槍蒸濺鍍系統成長，其餘各層薄膜皆以濺鍍方式成長，並針對元件進行直流量測、分析與討論。目前已做出具有轉換效率之硒化銅銦鎵薄膜太陽能電池，並在AM1.5之標準光源下，量測元件開路電壓Voc = 126 mV，短路電流密度Jsc = 1.366 mA/cm2，填充因子F.F = 39.46 %，而轉換效率則為0.068 %，接面理想因子η為3.63。由元件順向偏壓分析，推論空乏區內主要由複合電流所主導，所以需改善元件的接面問題以及CIGS薄膜品質，以增進元件效率。 This project focuses on fabrication of Al/AZO/ZnO/In2Se3/Cu2Se/CIGS/Mo/ SLG thin film solar cell (CIGS solar cell). The metal grid Al was fabricated by E-Gun evaporator and other films were deposited by sputtering. Detailed film analysis and discussion were carried out after film deposition immediately for the CIGS solar cell performance. The analysis includes X-ray, UV-NIR, Hall-measurement, EDS, SEM, 4-points resistance measurement. The fabricated CIGS thin film solar cell demonstrated preliminary results. By AM1.5 measurement, the measured open-circuit voltage (Voc) is 126 mV, the short-circuit current density (Jsc) is 1.366 mA/cm2, Fill Factor (FF) is 39.46 %, and the conversion efficiency is 0.068 %. The junction ideality factor in the forward diode measurement is about 3.63, which shows the major recombination current in the device with high turn-on resistance. To further improve the quality of absorber layer CIGS and the junctions would be able to obtain improved cell efficiency.
