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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/10427


    Title: 以硒化銦和,作為緩衝層之硒化銅銦鎵薄膜太陽能電池;CIGS thin film solar cell with In2Se3 and Cu2Se buffer layers
    Authors: 李芳存;fang tsun li
    Contributors: 電機工程研究所
    Keywords: 硒化銅;硒化銅銦鎵;硒化銦;Cu(In;Ga)Se2;In2Se3;Cu2Se
    Date: 2009-07-07
    Issue Date: 2009-09-22 12:16:35 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本論文主要研究內容為成長Al/AZO/ZnO/In2Se3/Cu2Se/CIGS/Mo/SLG結構之薄膜太陽能電池(CIGS solar cell),Al上電極使用電子槍蒸濺鍍系統成長,其餘各層薄膜皆以濺鍍方式成長,並針對元件進行直流量測、分析與討論。目前已做出具有轉換效率之硒化銅銦鎵薄膜太陽能電池,並在AM1.5之標準光源下,量測元件開路電壓Voc = 126 mV,短路電流密度Jsc = 1.366 mA/cm2,填充因子F.F = 39.46 %,而轉換效率則為0.068 %,接面理想因子η為3.63。由元件順向偏壓分析,推論空乏區內主要由複合電流所主導,所以需改善元件的接面問題以及CIGS薄膜品質,以增進元件效率。 This project focuses on fabrication of Al/AZO/ZnO/In2Se3/Cu2Se/CIGS/Mo/ SLG thin film solar cell (CIGS solar cell). The metal grid Al was fabricated by E-Gun evaporator and other films were deposited by sputtering. Detailed film analysis and discussion were carried out after film deposition immediately for the CIGS solar cell performance. The analysis includes X-ray, UV-NIR, Hall-measurement, EDS, SEM, 4-points resistance measurement. The fabricated CIGS thin film solar cell demonstrated preliminary results. By AM1.5 measurement, the measured open-circuit voltage (Voc) is 126 mV, the short-circuit current density (Jsc) is 1.366 mA/cm2, Fill Factor (FF) is 39.46 %, and the conversion efficiency is 0.068 %. The junction ideality factor in the forward diode measurement is about 3.63, which shows the major recombination current in the device with high turn-on resistance. To further improve the quality of absorber layer CIGS and the junctions would be able to obtain improved cell efficiency.
    Appears in Collections:[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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