以硒化銦和,作為緩衝層之硒化銅銦鎵薄膜太陽能電池; CIGS thin film solar cell with In2Se3 and Cu2Se buffer layers

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 博碩士論文 > Item 987654321/10427

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/10427

題名:	以硒化銦和,作為緩衝層之硒化銅銦鎵薄膜太陽能電池;CIGS thin film solar cell with In2Se3 and Cu2Se buffer layers
作者:	李芳存;fang tsun li
貢獻者:	電機工程研究所
關鍵詞:	硒化銅;硒化銅銦鎵;硒化銦;Cu(In;Ga)Se2;In2Se3;Cu2Se
日期:	2009-07-07
上傳時間:	2009-09-22 12:16:35 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	本論文主要研究內容為成長Al/AZO/ZnO/In2Se3/Cu2Se/CIGS/Mo/SLG結構之薄膜太陽能電池(CIGS solar cell)，Al上電極使用電子槍蒸濺鍍系統成長，其餘各層薄膜皆以濺鍍方式成長，並針對元件進行直流量測、分析與討論。目前已做出具有轉換效率之硒化銅銦鎵薄膜太陽能電池，並在AM1.5之標準光源下，量測元件開路電壓Voc = 126 mV，短路電流密度Jsc = 1.366 mA/cm2，填充因子F.F = 39.46 %，而轉換效率則為0.068 %，接面理想因子η為3.63。由元件順向偏壓分析，推論空乏區內主要由複合電流所主導，所以需改善元件的接面問題以及CIGS薄膜品質，以增進元件效率。 This project focuses on fabrication of Al/AZO/ZnO/In2Se3/Cu2Se/CIGS/Mo/ SLG thin film solar cell (CIGS solar cell). The metal grid Al was fabricated by E-Gun evaporator and other films were deposited by sputtering. Detailed film analysis and discussion were carried out after film deposition immediately for the CIGS solar cell performance. The analysis includes X-ray, UV-NIR, Hall-measurement, EDS, SEM, 4-points resistance measurement. The fabricated CIGS thin film solar cell demonstrated preliminary results. By AM1.5 measurement, the measured open-circuit voltage (Voc) is 126 mV, the short-circuit current density (Jsc) is 1.366 mA/cm2, Fill Factor (FF) is 39.46 %, and the conversion efficiency is 0.068 %. The junction ideality factor in the forward diode measurement is about 3.63, which shows the major recombination current in the device with high turn-on resistance. To further improve the quality of absorber layer CIGS and the junctions would be able to obtain improved cell efficiency.
顯示於類別:	[電機工程研究所] 博碩士論文

文件中的檔案:

檔案	大小	格式	瀏覽次數

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....