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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/25170


    Title: 摻雜層對層狀結構半導體光學特性的影響;The Influence of Doped Layer on the Optical Properties of Multilayer Semiconductor
    Authors: 徐子民
    Contributors: 物理學系
    Keywords: 分子束磊晶法;調制光譜;MBE;Modulation spectroscopy;物理類
    Date: 1994-07-01
    Issue Date: 2010-05-27 17:30:25 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 我們以分子束磊晶法(MBE)成長單原子攙雜( .delta.-doped)砷化鎵,及調制攙雜砷化鋁鎵/砷化 鎵異質結構,並利用調制光譜研究這些結構的 光學特性.調制光譜包含光調制和電解液電場 調制反射光譜,從單原子攙雜砷化鎵結構,我們 將可測量表面費米能階及觀察可能的二度空間 能階,從調制攙雜砷化鎵/砷化鋁鎵結構我們將 觀察可能由二度空間氣體所引起的Quantum confined Franz-Keldysh oscillations. 研究期間:8208 ~ 8307
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[Department of Physics] Research Project

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