The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29362

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29362

Title:	The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs
Authors:	Yang,MT;Chan,YJ;Chang,M
Contributors:	電機工程研究所
Keywords:	PSEUDOMORPHIC ALGAAS/INGAAS
Date:	1996
Issue Date:	2010-06-29 20:22:46 (UTC+8)
Publisher:	中央大學
Abstract:	Reliability issues of both AlGaAs/ln(0.2)Ga(O.8)As DCFETs and HEMTs were investigated and compared. By placing donors in the conducting channel, this doped-channel approach reduces the field intensity near the heterointerface resulting in a suppression of impact ionization process in the channel. Therefore, a more reliable device characteristics of DCFETs could be expected. The experimental results, through the biasing stress and temperature dependent evaluations, demonstrated a strong correlation between the impact ionization rate and device reliabilities.
Relation:	COMPOUND SEMICONDUCTORS 1995
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	503	View/Open

社群 sharing