The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs

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题名:	The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs
作者:	Yang,MT;Chan,YJ;Chang,M
贡献者:	電機工程研究所
关键词:	PSEUDOMORPHIC ALGAAS/INGAAS
日期:	1996
上传时间:	2010-06-29 20:22:46 (UTC+8)
出版者:	中央大學
摘要:	Reliability issues of both AlGaAs/ln(0.2)Ga(O.8)As DCFETs and HEMTs were investigated and compared. By placing donors in the conducting channel, this doped-channel approach reduces the field intensity near the heterointerface resulting in a suppression of impact ionization process in the channel. Therefore, a more reliable device characteristics of DCFETs could be expected. The experimental results, through the biasing stress and temperature dependent evaluations, demonstrated a strong correlation between the impact ionization rate and device reliabilities.
關聯:	COMPOUND SEMICONDUCTORS 1995
显示于类别:	[電機工程研究所] 期刊論文

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