HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29383

Title:	HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER
Authors:	YUANG,RH;SHIEH,HC;CHIEN,YJ;CHAN,YJ;CHYI,JI;LIN,W;TU,YK
Contributors:	電機工程研究所
Keywords:	SEMICONDUCTOR-METAL PHOTODETECTORS
Date:	1995
Issue Date:	2010-06-29 20:23:18 (UTC+8)
Publisher:	中央大學
Abstract:	We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-mu m x 300-mu m square and a 300-mu m-diameter circular detection area, With a pseudomorphic In0.9Ga0.1P cap layer, the detectors exhibit dark current densities less than 1 pA/mu m(2), The responsivity ranges between 0.4 and 0.6 A/W depending on finger spacing, Bandwidth over 1 GHz has been obtained for these large-area detectors, Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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