HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29383

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29383

题名:	HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER
作者:	YUANG,RH;SHIEH,HC;CHIEN,YJ;CHAN,YJ;CHYI,JI;LIN,W;TU,YK
贡献者:	電機工程研究所
关键词:	SEMICONDUCTOR-METAL PHOTODETECTORS
日期:	1995
上传时间:	2010-06-29 20:23:18 (UTC+8)
出版者:	中央大學
摘要:	We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-mu m x 300-mu m square and a 300-mu m-diameter circular detection area, With a pseudomorphic In0.9Ga0.1P cap layer, the detectors exhibit dark current densities less than 1 pA/mu m(2), The responsivity ranges between 0.4 and 0.6 A/W depending on finger spacing, Bandwidth over 1 GHz has been obtained for these large-area detectors, Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[電機工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	653	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing