HIGH-PERFORMANCE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A THIN HYDROGENATED AMORPHOUS-SILICON LAYER ON CRYSTALLINE SILICON

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Title:	HIGH-PERFORMANCE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A THIN HYDROGENATED AMORPHOUS-SILICON LAYER ON CRYSTALLINE SILICON
Authors:	LAIH,LH;TSAY,WC;CHEN,YA;JEN,TS;YUANG,RH;HONG,JW
Contributors:	電機工程研究所
Keywords:	SCHOTTKY
Date:	1995
Issue Date:	2010-06-29 20:23:20 (UTC+8)
Publisher:	中央大學
Abstract:	A thin intrinsic hydrogenated amorphous silicon (i-a-Si:H) layer was used to improve the performance of Si metal-semiconductor-metal photodetectors (MSM-PDs). At a bias of 10V, this a-Si:H MSM-PD had a rise time of 25ps and an FWHM of 55ps for temporal response, a dark current density of 690fA/mu m(2), a responsivity of 0.7 A/W and a spectral response peaking at 700nm.
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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