MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29423

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Title:	MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS
Authors:	CHYI,JI;SHIEH,JL;LIN,RM;NEE,TE;PAN,JW
Contributors:	電機工程研究所
Keywords:	CRITICAL LAYER THICKNESS;MISFIT DISLOCATIONS;STRAIN;INXGA1-XAS;HETEROSTRUCTURES;MECHANISMS
Date:	1994
Issue Date:	2010-06-29 20:24:25 (UTC+8)
Publisher:	中央大學
Abstract:	The surface reconstruction of InAlAs on GaAs between 490 and 700-degrees-C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2x1) and (1x1) surfaces occur at a substrate temperature between 490 and 650-degrees-C, while at a temperature above 650-degrees-C, the ordered As-stabilized (3x2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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