MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS

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题名:	MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS
作者:	CHYI,JI;SHIEH,JL;LIN,RM;NEE,TE;PAN,JW
贡献者:	電機工程研究所
关键词:	CRITICAL LAYER THICKNESS;MISFIT DISLOCATIONS;STRAIN;INXGA1-XAS;HETEROSTRUCTURES;MECHANISMS
日期:	1994
上传时间:	2010-06-29 20:24:25 (UTC+8)
出版者:	中央大學
摘要:	The surface reconstruction of InAlAs on GaAs between 490 and 700-degrees-C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2x1) and (1x1) surfaces occur at a substrate temperature between 490 and 650-degrees-C, while at a temperature above 650-degrees-C, the ordered As-stabilized (3x2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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