Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination

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題名:	Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination
作者:	Remashan,K.;Huang,Wen-Pin;Chyi,Jen-Inn
貢獻者:	電機工程研究所
關鍵詞:	CHEMICAL-VAPOR-DEPOSITION;BREAKDOWN VOLTAGE;GAN SCHOTTKY;RECTIFIERS;DESIGN;HETEROSTRUCTURES;TRANSISTOR;SUBSTRATE;DENSITY;LAYERS
日期:	2007
上傳時間:	2010-07-06 18:18:41 (UTC+8)
出版者:	中央大學
摘要:	In this paper, we report the breakdown voltage (BV) of AlGaN/GaN based Schottky diodes with field plate edge termination. Simulation and fabrication of AlGaN/GaN Schottky diodes were carried out. The simulations were performed using the commercial 2-D dev
關聯:	MICROELECTRONIC ENGINEERING
顯示於類別:	[電機工程研究所] 期刊論文

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