The plasma enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO2) thin films from SiH4 and N2O has been executed with and without CO2 laser illumination. The quality of the film processed under a 10.6 mum CO2 laser was close to that of a fil
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
