Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38367

Title:	Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires
Authors:	CHANG Chih-Yang;LAN Tian-Wey;CHI Gou-Chung;CHEN Li-Chyong;CHEN Kuei-Hsien;CHEN Jau-Juin;JANG Soohwan;REN F.;PEARTON S. J.
Contributors:	物理研究所
Keywords:	GALLIUM NITRIDE NANOWIRES;BUILDING-BLOCKS;TRANSPORT-PROPERTIES;CATALYTIC GROWTH;FIELD-EMISSION;NANORODS;DEVICES;TEMPERATURE
Date:	2006
Issue Date:	2010-07-08 13:25:00 (UTC+8)
Publisher:	中央大學
Abstract:	We report studies on the effect of UV/ozone cleaning on n-type GaN nanowires prior to Ti/Al/Pt/Au ohmic contact deposition and the effect of annealing temperature on the total resistance of the contacted nanowires. The UV/ozone cleaning for periods of 1-5
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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