Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38368

Title:	Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers
Authors:	Shu,G. W.;Wu,P. F.;Liu,Y. W.;Wang,J. S.;Shen,J. L.;Lin,T. Y.;Pong,P. J.;Chi,G. C.;Chang,H. J.;Chen,Y. F.;Lee,Y. C.
Contributors:	物理研究所
Keywords:	MOLECULAR-BEAM EPITAXY;BAND-GAP
Date:	2006
Issue Date:	2010-07-08 13:25:02 (UTC+8)
Publisher:	中央大學
Abstract:	We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the
Relation:	JOURNAL OF PHYSICS-CONDENSED MATTER
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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