Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

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题名:	Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers
作者:	Shu,G. W.;Wu,P. F.;Liu,Y. W.;Wang,J. S.;Shen,J. L.;Lin,T. Y.;Pong,P. J.;Chi,G. C.;Chang,H. J.;Chen,Y. F.;Lee,Y. C.
贡献者:	物理研究所
关键词:	MOLECULAR-BEAM EPITAXY;BAND-GAP
日期:	2006
上传时间:	2010-07-08 13:25:02 (UTC+8)
出版者:	中央大學
摘要:	We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the
關聯:	JOURNAL OF PHYSICS-CONDENSED MATTER
显示于类别:	[物理研究所] 期刊論文

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