Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

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題名:	Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers
作者:	Shu,G. W.;Wu,P. F.;Liu,Y. W.;Wang,J. S.;Shen,J. L.;Lin,T. Y.;Pong,P. J.;Chi,G. C.;Chang,H. J.;Chen,Y. F.;Lee,Y. C.
貢獻者:	物理研究所
關鍵詞:	MOLECULAR-BEAM EPITAXY;BAND-GAP
日期:	2006
上傳時間:	2010-07-08 13:25:02 (UTC+8)
出版者:	中央大學
摘要:	We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the
關聯:	JOURNAL OF PHYSICS-CONDENSED MATTER
顯示於類別:	[物理研究所] 期刊論文

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